FQD4N25TF

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FQD4N25TF is a type of field-effect transistor (FET), specifically a metal-oxide-semiconductor FET (MOSFET). It is a single device, meaning that it consists of just one single (channel) transistor. It is used in a variety of applications to amplify or switch the voltage and current in an electrical circuit.

A MOSFET is a transistor-like semiconductor device that consists of three terminals - a source, gate and drain - in a very small package. The source and drain are connected to the current-carrying conductors in the circuit, while the gate is connected to an external voltage. The voltage applied to the gate controls the current carrying capacity of the source–drain path. A single MOSFET can serve as either an amplifier or a switch, depending on its requirements.

The FQD4N25TF has a voltage rating of 25 volts and a drain-source breakdown voltage of 20V, making it well-suited for low voltage applications. It has a maximum power dissipation of 12.5 watts and a maximum drain current of 8.5A. The MOSFET also has a fast switching time of 10-25ns. It has an on-resistance of 0.62Ω and a gate-source threshold voltage of 2.2V.

The FQD4N25TF is commonly used in switching circuits, where its low on-resistance and high drain current enable quick and efficient power conversion. It is also well-suited for high-frequency switching applications, such as in the power supplies of modern electronics. Additionally, it can be used in low voltage circuits, such as those found in LED lighting, and also as a buffer in high-voltage circuits.

The working principle of the FQD4N25TF is based on two main features of the MOSFET - the gate current and the gate threshold voltage. When a voltage is applied to the gate, the current starts flowing from the source to the drain, allowing a current to flow through the circuit. The higher the gate voltage, the higher the current flowing through the transistor. The gate threshold voltage is the minimum voltage required to switch the MOSFET from “off” to “on”. As the gate voltage increases, the current through the MOSFET increases as well.

In conclusion, the FQD4N25TF is a single MOSFET commonly used in low-voltage, high-frequency applications as a switch or amplifier. Its low gate threshold voltage and drain current allows efficient control of the current and switching times in a circuit.

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