FQD4P25TM Allicdata Electronics
Allicdata Part #:

FQD4P25TM-ND

Manufacturer Part#:

FQD4P25TM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 250V 3.1A DPAK
More Detail: P-Channel 250V 3.1A (Tc) 2.5W (Ta), 45W (Tc) Surfa...
DataSheet: FQD4P25TM datasheetFQD4P25TM Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 1.55A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The FQD4P25TM is an integrated power MOSFET device with a single, fully-protected N-channel MOSFET. The FQD4P25TM has been specifically designed to optimize power efficiency in a wide variety of on-board and off-board applications. The device is a complete power solution that includes advanced functionality and safety features.

The FQD4P25TM is designed for high efficiency in low to medium voltage applications (up to 230V) and comes with a pre-drilled hole for connection to an output circuit board. This allows for easy integration with other devices and a significant reduction in system build costs.

The FQD4P25TM offers an extremely low on-state resistance (RDS(on)), which helps to improve switch network efficiency and reduce energy losses. This also reduces the system’s thermal footprint and ensures a cooler and more efficient power solution in applications where high-efficiency power is a critical factor.

The FQD4P25TM integrated device is also available with a wide range of additional features, including thermal shutdown, output overvoltage protection, and over-current protection. These features further enhance the device’s ability to provide reliable, safe and efficient power solutions.

The FQD4P25TM’s working principle is based on an N-channel MOSFET and is designed to provide a low RDS(on) in order to maximize efficiency. This can allow for higher power dissipation and improved overall performance when compared to other power solutions such as P-channel MOSFETs. This design also helps to reduce the power consumption of the system, as the lower gate voltage requires less energy to turn the MOSFET “on”.

The FQD4P25TM offers a wide range of applications including motor control, LED lighting, solar, telephone power systems, medical equipment, automotive and industrial applications. The device is also suitable for use in a specialized application such as in a Tesla Model S, where power efficiency is a critical factor in the overall performance and reliability of the vehicle.

The FQD4P25TM is an integrated power MOSFET designed to provide efficient and reliable power solutions for a variety of applications. With its low on-state resistance, improved power efficiency, thermal shutdown, and additional safety features, the FQD4P25TM is an ideal solution for any number of on-board and off-board applications.

The specific data is subject to PDF, and the above content is for reference

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