Allicdata Part #: | FQD4P25TM-ND |
Manufacturer Part#: |
FQD4P25TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 250V 3.1A DPAK |
More Detail: | P-Channel 250V 3.1A (Tc) 2.5W (Ta), 45W (Tc) Surfa... |
DataSheet: | FQD4P25TM Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 420pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 2.1 Ohm @ 1.55A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.1A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FQD4P25TM is an integrated power MOSFET device with a single, fully-protected N-channel MOSFET. The FQD4P25TM has been specifically designed to optimize power efficiency in a wide variety of on-board and off-board applications. The device is a complete power solution that includes advanced functionality and safety features.
The FQD4P25TM is designed for high efficiency in low to medium voltage applications (up to 230V) and comes with a pre-drilled hole for connection to an output circuit board. This allows for easy integration with other devices and a significant reduction in system build costs.
The FQD4P25TM offers an extremely low on-state resistance (RDS(on)), which helps to improve switch network efficiency and reduce energy losses. This also reduces the system’s thermal footprint and ensures a cooler and more efficient power solution in applications where high-efficiency power is a critical factor.
The FQD4P25TM integrated device is also available with a wide range of additional features, including thermal shutdown, output overvoltage protection, and over-current protection. These features further enhance the device’s ability to provide reliable, safe and efficient power solutions.
The FQD4P25TM’s working principle is based on an N-channel MOSFET and is designed to provide a low RDS(on) in order to maximize efficiency. This can allow for higher power dissipation and improved overall performance when compared to other power solutions such as P-channel MOSFETs. This design also helps to reduce the power consumption of the system, as the lower gate voltage requires less energy to turn the MOSFET “on”.
The FQD4P25TM offers a wide range of applications including motor control, LED lighting, solar, telephone power systems, medical equipment, automotive and industrial applications. The device is also suitable for use in a specialized application such as in a Tesla Model S, where power efficiency is a critical factor in the overall performance and reliability of the vehicle.
The FQD4P25TM is an integrated power MOSFET designed to provide efficient and reliable power solutions for a variety of applications. With its low on-state resistance, improved power efficiency, thermal shutdown, and additional safety features, the FQD4P25TM is an ideal solution for any number of on-board and off-board applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FQD4N50TM_WS | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 500V 2.6A DPA... |
FQD4P40TM-AM002 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 400V 2.7AP-Ch... |
FQD4N25TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 250V 3A DPAKN... |
FQD4N20LTM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 3.2A DPA... |
FQD4N20LTF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 3.2A DPA... |
FQD4N20TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 3A DPAKN... |
FQD4P25TM | ON Semicondu... | -- | 1000 | MOSFET P-CH 250V 3.1A DPA... |
FQD4N50TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 500V 2.6A DPA... |
FQD4N50TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 500V 2.6A DPA... |
FQD4P40TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 400V 2.7A DPA... |
FQD4N25TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 250V 3A DPAKN... |
FQD4P25TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 250V 3.1A DPA... |
FQD4P40TM | ON Semicondu... | -- | 2500 | MOSFET P-CH 400V 2.7A DPA... |
FQD4N20TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 3A DPAKN... |
FQD4N25TM-WS | ON Semicondu... | -- | 1000 | MOSFET N-CH 250V 3A DPAKN... |
FQD4P25TM-WS | ON Semicondu... | 0.27 $ | 1000 | MOSFET P-CH 250V 3.1A DPA... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...