FQD4N50TM_WS

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The FQD4N50TM_WS is a state-of-the-art insulated-gate field-effect transistor (IGFET). It is a single-last complementary (CTL or N-channel) device developed for superior performance and reliability in various power device applications.

Application Field

The FQD4N50TM_WS can be used in a wide range of applications, from automotive airbags and air conditioning to consumer applications such as white goods, power tools, and power supplies. Its wide range of features include high-speed switching; low gate threshold voltage; low on-resistance; fast reverse transfer capacitance; low output capacitance; ultra-low gate charge; low gate tunneling current; and low Qg. It is also capable of providing superior thermal performance, low turn-on gate leakage, low gate drive losses, and stable operation under temperature cycling.

Working Principle

The FQD4N50TM_WS is an insulated-gate field-effect transistor (IGFET) device that works using the principle of electron tunneling. Electrons are driven from a source region to a drain region through a thin gate oxide layer when a voltage is applied between the gate and source. The amount of electron tunneling that takes place, and hence the resistance of the device, is determined by the gate voltage applied. The FQD4N50TM_WS uses an additional gate voltage to control the speed of switching. As the gate voltage is increased, the electron tunneling will increase and the resistance of the device will decrease. This allows for faster switching speeds.

The FQD4N50TM_WS is also capable of providing superior performance and reliability due to its low gate threshold voltage and on-resistance values. The low gate threshold voltage reduces the amount of electrical stress applied to the gate, while the low on-resistance improves the current carrying ability of the device. Additionally, the low gate tunneling current helps reduce the device\'s power consumption while improving its stability.

Conclusion

The FQD4N50TM_WS is a single-last complementary (CTL or N-Channel) device that has been developed for superior performance and reliability in various power device applications. Its wide range of features include high-speed switching, low gate threshold voltage, low on-resistance, fast reverse transfer capacitance, low output capacitance, ultra-low gate charge, low gate tunneling current, and low Qg. Additionally, it offers superior thermal performance, low turn-on gate leakage, low gate drive losses, and stable operation under temperature cycling.

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