Allicdata Part #: | FQD4P40TF-ND |
Manufacturer Part#: |
FQD4P40TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 400V 2.7A DPAK |
More Detail: | P-Channel 400V 2.7A (Tc) 2.5W (Ta), 50W (Tc) Surfa... |
DataSheet: | FQD4P40TF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 3.1 Ohm @ 1.35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.7A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FQD4P40TF is a high power field effect transistor (FET) made with the latest technology and designed especially to provide top performance in its applications. FQD4P40TF is a single N-Channel FET with an industry-standard pin out, making it suitable for a wide range of applications. FQD4P40TF is designed to provide high current capacities and low impedance levels to support high-current and low voltage operations. Its performance data make it ideal for many power electronic designs.
The FQD4P40TF is a single N-Channel FET with a Gate-Source voltage ranging from -2V to -20V, Drain-Source voltage from 0V to 650V, and Drain current from 9A up to 14A with a maximum drain to source on-state resistance of 2.365mΩ at 25⁰ C and 35A for the FQD4P40TFQR at 25⁰C. It also has a maximum temperature of 150⁰C, a frequency variation rating of 6V and a maximum gate leakage current of 10uA.
Working Principle
The FQD4P40TF is designed to provide low impedance, high current, and low voltage operation due to its advanced N-channel FET technology. In N-Channel FETs, they tend to operate at a much lower voltage and resistance than other FETs. This lowers the impedance and allows for a greater amount of current to flow which is beneficial in many situations. By providing low impedance and high current capacities, the FQD4P40TF is able to effectively operate in high-power applications.
The FQD4P40TF also features low input gate capacitance and gate resistance, which helps to provide faster switching times and decreased gate power dissipation. Additionally, the FQD4P40TF is designed to minimize yields and leakage current during operation and is designed to reduce the risk of static destruction. All of these features contribute to the FQD4P40TF’s reliability and helps make it an ideal choice for powering high-current applications.
Application Field
The FQD4P40TF is ideal for use in a wide variety of applications. It is particularly suited for high-power applications due to its high current capacities and low impedance design. It is able to power motors and other devices that require high-current with high efficiency. It is also suitable for switching supplies and power conditioning, as well as for digital control of medium-to-high voltage circuits. Additionally, the FQD4P40TF is suitable for circuit protection applications, providing power control and guarding against field fluctuations.
In addition to its high-power applications, the FQD4P40TF is also suitable for many other applications such as audio amplification and other general electronics designs. It is also suitable for high voltage inverters, as well as power-line switching systems, and is designed to help families to save energy. The FQD4P40TF is an ideal choice for such energy-saving applications due to its high current capacities and low impedance design.
The FQD4P40TF is designed to provide excellent performance while operating in extreme temperatures. Its temperature rating of 150⁰C ensures that it will continue to operate effectively even in extremely hot environments. Additionally, its low gate leakage current and gate capacitance help to reduce the risk of static destruction and improve the overall performance. All of these factors help to make the FQD4P40TF an ideal choice for powering many high-voltage, high-current applications.
The specific data is subject to PDF, and the above content is for reference
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