FQD4N50TM

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQD4N50TM power MOSFET is a single enhancement-mode field-effect transistor (FET) of the insulated gate bipolar transistor (IGBT) or mosfet family, specifically designed for use in switching applications in power electronics applications, especially in motor drives and other high-power circuit designs. This FET operates in the same way as a normal N-MOSFET but at a much higher voltage and current rating, making it an attractive power device for a wide variety of applications including motor drives, audio amplifiers, inverters, voltage regulator circuits, and other high-power circuit designs.

The FQD4N50TM power MOSFET is designed to take the maximum advantage of the latest breakthrough in MOSFETs, capable of working at higher voltages and temperatures than its traditional predecessors. As a dual-channel MOSFET, it increases design flexibility and performance while offering improved RDS(on) characteristics. This FET also offers more than 30 percent lower input capacitance compared to a single-channel MOSFET, making it an ideal choice for fast switching applications.

The FQD4N50TM power MOSFET is typically selected for use in motor drives, audio amplifiers, and voltage regulator circuits, among other high-power applications. Depending on the design, this FET is capable of operating at temperatures up to 175°C, allowing for higher power operation than conventional MOSFETs. Additionally, its high-voltage rating of 950 V enables high-power designs that would otherwise have been impossible to achieve with traditional FETs.

The working principle of the FQD4N50TM power MOSFET utilizes the latest breakthroughs in MOSFETs to ensure utmost efficiency. When a voltage is applied to the gate, a controlled electric field is created within the FET\'s structure. The electric field causes electrons to be attracted to the P-type silicon region bordering the N-type silicon region in the FET, resulting in a low resistance current path. This reduction in resistance, also known as Low RDS(on), leads to an improved performance of the FET.

As with all FETs, understanding the gate charge and switching losses associated with the FQD4N50TM is essential for successful design. The capacitance between the gate and the source is known as the gate charge and is the crucial factor for determining the switching loss of the device. This FET’s gate charge is very low at 4.4 nC, ensuring high-efficiency operation with minimal switching losses.

Generally speaking, the FQD4N50TM power MOSFET is an excellent choice for high-voltage, high-power applications. This FET offers improved performance, temperature and RDS(on) characteristics compared to conventional FETs, making it an ideal choice for motor drives, audio amplifiers, voltage regulator circuits, and other high-power applications. Its low gate charge and robust design enable a highly efficient and reliable operation for any electrical design.

The specific data is subject to PDF, and the above content is for reference