FQD4P40TM Allicdata Electronics

FQD4P40TM Discrete Semiconductor Products

Allicdata Part #:

FQD4P40TMTR-ND

Manufacturer Part#:

FQD4P40TM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 400V 2.7A DPAK
More Detail: P-Channel 400V 2.7A (Tc) 2.5W (Ta), 50W (Tc) Surfa...
DataSheet: FQD4P40TM datasheetFQD4P40TM Datasheet/PDF
Quantity: 2500
Stock 2500Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 3.1 Ohm @ 1.35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FQD4P40TM is a trench MOSFET developed by Fairchild Semiconductor to be used for applications such as power switch mode power supplies (SMPS) and motor control. It has an operating temperature range of -55°C to 175°C and a maximum drain current of up to 40A. The FQD4P40TM is available in a variety of packages, including a dual D-Pak, 4-pin D-Pak, and TO-251AA.

The FQD4P40TM is a N-channel MOSFET, which means it is made from n-type material. It has two regions, the drain and the source, separated by a thin layer of semiconductor material. The gate is separated from the other two regions by a thin layer of dielectric material. The device works by controlling the current flow between the two regions.

When a voltage is applied to the gate relative to the source, the voltage on the gate creates a potential barrier called the potential gate-source capacitance. This potential barrier creates a‘ pinch-off’ effect, allowing charged particles to pass through the gate and onto the substrate but not allowing current to flow from the source to the drain. A small current can still travel through the device, however, by flowing through the drain-source and gate-source resistances.

The FQD4P40TM is an ideal device for applications that require power switching and high current capabilities. It offers low leakage, fast switching speed and low on-resistance. In addition, it has a high power-dissipated and fast transit time. These features offer good electromagnetic compatibility and make it suitable for use in consumer equipment, radio communications equipment and automotive systems.

The FQD4P40TM is also a fast switching device that is well suited for applications such as motor control and power switch-mode power supplies (SMPS). It offers low gate capacitance, fast rise and fall times, and an easy-to-integrate package. Its low on-resistance makes it an ideal choice for high frequency applications.

In conclusion, the FQD4P40TM is a high-performance MOSFET developed to meet the requirements of the most demanding applications. It is an ideal choice for power switching and high current applications, as well as for motor control and switch-mode power supplies (SMPS). It offers low gate charge, low on-resistance, high power dissipation, and fast switching speeds.

The specific data is subject to PDF, and the above content is for reference

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