FQI10N20CTU

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FQI10N20CTU is a type of Field Effect Transistor, or FET, that is manufactured by Fairchild Semiconductor. It is a Single N-Channel Enhancement Mode Transistor and is commonly used in power electronics and other applications that require high voltage and current capabilities. The FQI10N20CTU has a typical on-state resistance of 10 Ohms, a drain-source breakdown voltage of 200V, and a continuous drain current of 20 Amps at a case temperature of 250°C.

The working principle of the FQI10N20CTU is based on the capacitance–voltage effect, also known as “channel modulation” or “depletion-style modulation”. It works by varying the width of the depletion layer below the gate of the transistor, which allows the transistor to control the flow of current between its source and drain. The FQI10N20CTU uses a low-voltage gate control signal, which is typically much lower than the drain-source voltage. This allows the FQI10N20CTU to be used in many applications requiring high power but low operating voltages.

When used in power electronics applications, the FQI10N20CTU can be used to regulate the flow of current in a circuit. This is done by varying the gate control signal to modify the flow of current between the source and the drain. This allows the circuit to remain operational even at high source-drain voltages. For example, if the device is driving a motor, the FQI10N20CTU can be used to regulate the amount of current drawn from the power source and ensure that the motor stays within its operational limits.

The FQI10N20CTU is also often used in switching applications. Here, it is used to quickly and efficiently switch large currents between its source and drain terminals. It is well-suited for this application because of its fast switching time, as well as its low voltage gate control signal. This makes it useful for high-speed applications, such as cellular networks, as well as more traditional low-speed switching applications.

In summary, the FQI10N20CTU is a type of single N-Channel Enhancement Mode Field Effect Transistor manufactured by Fairchild Semiconductor. It has a typical on-state resistance of 10 Ohms, a drain-source breakdown voltage of 200V, and a continuous drain current of 20 Amps at a case temperature of 250°C. Its working principle is based on the capacitance-voltage effect, which modulates the flow of current between its source and drain by varying the width of the depletion layer below the gate of the transistor. It is commonly used in power electronics and switching applications due to its fast switching times and low operating voltages.

The specific data is subject to PDF, and the above content is for reference