Allicdata Part #: | FQI17N08TU-ND |
Manufacturer Part#: |
FQI17N08TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 80V 16.5A I2PAK |
More Detail: | N-Channel 80V 16.5A (Tc) 3.13W (Ta), 65W (Tc) Thro... |
DataSheet: | FQI17N08TU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 65W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 115 mOhm @ 8.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16.5A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
"Application fields and working principles of FQI17N08TU" can be categorized as Transistors - FETs, MOSFETs - Single.
FQI17N08TU is a type of field effect transistor (FET) with a metal-oxide-semiconductor (MOS) structure. It is a single FET, which means that it has a single gate input, and is made up of an insulated gate, source and drain. This type of FET is used in a variety of applications due to its ability to control the flow of current between its source and drain by controlling the impedance of the gate. FQI17N08TU is also known as an enhancement-mode FET, meaning that the voltage applied to the gate increases the current flowing between the source and drain.
FQI17N08TU is used in various applications. It is widely used in low voltage, low current operations such as analog amplifiers, video displays and audio systems. It is also used in high-frequency switching applications, such as frequency modulators, sample and hold circuits, and pulse width modulators. This type of FET is also used in power devices, such as motor control and power switching applications.
FQI17N08TU works on the principle of controlling the conductance between the source and drain by controlling the voltage applied to the gate. This is accomplished by using an electric field to create an electric electrostatic force between the insulated gate, source and drain. By controlling the gate voltage, the electrostatic force will change the impedance between the source and drain, thus controlling the current flow.
FQI17N08TU has a high input impedance due to the insulated gate, which allows it to be used in a variety of applications where it may be used as a voltage controlled resistor. The gate is also relatively insensitive to temperature and voltage changes, making it suitable for use in a variety of harsh environments. FQI17N08TU also has very low input capacitance, making it ideal for applications where switching speed and power performance are required.
FQI17N08TU is a versatile FET with a multitude of applications. Its wide range of features, coupled with its high input impedance, low input capacitance and high temperature accuracy make it a popular choice for a variety of applications. A wide selection of FQI17N08TU FETs are available from various manufacturers, providing users with an array of options to choose from.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FQI13N50CTU | ON Semicondu... | 1.73 $ | 360 | MOSFET N-CH 500V 13A I2PA... |
FQI13N06LTU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 13.6A I2P... |
FQI13N06TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 13A I2PAK... |
FQI11P06TU | ON Semicondu... | -- | 1000 | MOSFET P-CH 60V 11.4A I2P... |
FQI1P50TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 500V 1.5A I2P... |
FQI17N08LTU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 80V 16.5A I2P... |
FQI17N08TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 80V 16.5A I2P... |
FQI17P06TU | ON Semicondu... | -- | 1000 | MOSFET P-CH 60V 17A I2PAK... |
FQI10N20CTU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 9.5A I2P... |
FQI15P12TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 120V 15A I2PA... |
FQI19N20CTU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 19A I2PA... |
FQI19N20TU | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 19.4A I2... |
FQI10N60CTU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 9.5A I2P... |
FQI11N40TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 400V 11.4A I2... |
FQI12N60CTU | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 12A I2PA... |
FQI12N60TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 10.5A I2... |
FQI12N50TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 500V 12.1A I2... |
FQI16N25CTU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 250V 15.6A I2... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...