FQI17P06TU Allicdata Electronics
Allicdata Part #:

FQI17P06TU-ND

Manufacturer Part#:

FQI17P06TU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 60V 17A I2PAK
More Detail: P-Channel 60V 17A (Tc) 3.75W (Ta), 79W (Tc) Throug...
DataSheet: FQI17P06TU datasheetFQI17P06TU Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 79W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 120 mOhm @ 8.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQI17P06TU is a new type of Field Effect Transistor (FET) commonly used in electronic circuits. It is a single n-channel enhancement FET, meaning it is a transistor that operates by the majority carrier injection method. The FET is part of the FQI series of FETs, which are designed for high speed switching, providing quick and reliable performance for any kind of circuit.

The FQI17P06TU is a single transistor, meaning it contains just one junction and consists of three pins – the source, drain, and gate. The source and drain are responsible for providing the current to the circuit, while the gate is what controls the current by varying its voltage. The gate voltage is the input voltage, and when this voltage is increased, the current passing through the circuit is increased as well. This is due to the transistor\'s phenomenon of field-effect action, where a voltage is applied to the gate to control the current passing through the source and drain. This kind of transistor allows for improved speed in switching, as well as greater precision.

In terms of its application, the FQI17P06TU is suitable for use in many different kinds of electronics, from power supplies to voltage regulators. It is especially suited for use in high speed switching applications, as its high speed switching ability allows for improved accuracy and performance across the board. The FET can also be used in amplifiers and pulse circuits, where it can effectively act as a voltage controlled switch, capable of performing very precise switches within a split second. The transistor can also be used in timers, as well as oscillators, allowing them to be used in a wide variety of electronic circuits.

The FQI17P06TU is also popular because of its easy availability and relatively low cost compared to other FETs. The transistor is also able to handle high currents and voltages, making it suitable for a wide range of applications. Additionally, the transistor has an incredibly low on-resistance, allowing it to provide a higher current while maintaining a low profile voltage. These features make the FQI17P06TU a popular choice for many different kinds of circuits.

As a result, the FQI17P06TU is a versatile and powerful solution for many different kinds of applications, from high speed switching circuits, to amplifiers and oscillators. It is also widely available and relatively inexpensive, making it a popular choice all around. The transistor\'s high current and low voltage, along with its fast switching speed and excellent performance all make it an ideal solution for a wide range of applications and circuit designs.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FQI1" Included word is 18
Part Number Manufacturer Price Quantity Description
FQI13N50CTU ON Semicondu... 1.73 $ 360 MOSFET N-CH 500V 13A I2PA...
FQI13N06LTU ON Semicondu... 0.0 $ 1000 MOSFET N-CH 60V 13.6A I2P...
FQI13N06TU ON Semicondu... 0.0 $ 1000 MOSFET N-CH 60V 13A I2PAK...
FQI11P06TU ON Semicondu... -- 1000 MOSFET P-CH 60V 11.4A I2P...
FQI1P50TU ON Semicondu... 0.0 $ 1000 MOSFET P-CH 500V 1.5A I2P...
FQI17N08LTU ON Semicondu... 0.0 $ 1000 MOSFET N-CH 80V 16.5A I2P...
FQI17N08TU ON Semicondu... 0.0 $ 1000 MOSFET N-CH 80V 16.5A I2P...
FQI17P06TU ON Semicondu... -- 1000 MOSFET P-CH 60V 17A I2PAK...
FQI10N20CTU ON Semicondu... 0.0 $ 1000 MOSFET N-CH 200V 9.5A I2P...
FQI15P12TU ON Semicondu... 0.0 $ 1000 MOSFET P-CH 120V 15A I2PA...
FQI19N20CTU ON Semicondu... 0.0 $ 1000 MOSFET N-CH 200V 19A I2PA...
FQI19N20TU ON Semicondu... -- 1000 MOSFET N-CH 200V 19.4A I2...
FQI10N60CTU ON Semicondu... 0.0 $ 1000 MOSFET N-CH 600V 9.5A I2P...
FQI11N40TU ON Semicondu... 0.0 $ 1000 MOSFET N-CH 400V 11.4A I2...
FQI12N60CTU ON Semicondu... -- 1000 MOSFET N-CH 600V 12A I2PA...
FQI12N60TU ON Semicondu... 0.0 $ 1000 MOSFET N-CH 600V 10.5A I2...
FQI12N50TU ON Semicondu... 0.0 $ 1000 MOSFET N-CH 500V 12.1A I2...
FQI16N25CTU ON Semicondu... 0.0 $ 1000 MOSFET N-CH 250V 15.6A I2...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics