Allicdata Part #: | FQI17P06TU-ND |
Manufacturer Part#: |
FQI17P06TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 17A I2PAK |
More Detail: | P-Channel 60V 17A (Tc) 3.75W (Ta), 79W (Tc) Throug... |
DataSheet: | FQI17P06TU Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 8.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FQI17P06TU is a new type of Field Effect Transistor (FET) commonly used in electronic circuits. It is a single n-channel enhancement FET, meaning it is a transistor that operates by the majority carrier injection method. The FET is part of the FQI series of FETs, which are designed for high speed switching, providing quick and reliable performance for any kind of circuit.
The FQI17P06TU is a single transistor, meaning it contains just one junction and consists of three pins – the source, drain, and gate. The source and drain are responsible for providing the current to the circuit, while the gate is what controls the current by varying its voltage. The gate voltage is the input voltage, and when this voltage is increased, the current passing through the circuit is increased as well. This is due to the transistor\'s phenomenon of field-effect action, where a voltage is applied to the gate to control the current passing through the source and drain. This kind of transistor allows for improved speed in switching, as well as greater precision.
In terms of its application, the FQI17P06TU is suitable for use in many different kinds of electronics, from power supplies to voltage regulators. It is especially suited for use in high speed switching applications, as its high speed switching ability allows for improved accuracy and performance across the board. The FET can also be used in amplifiers and pulse circuits, where it can effectively act as a voltage controlled switch, capable of performing very precise switches within a split second. The transistor can also be used in timers, as well as oscillators, allowing them to be used in a wide variety of electronic circuits.
The FQI17P06TU is also popular because of its easy availability and relatively low cost compared to other FETs. The transistor is also able to handle high currents and voltages, making it suitable for a wide range of applications. Additionally, the transistor has an incredibly low on-resistance, allowing it to provide a higher current while maintaining a low profile voltage. These features make the FQI17P06TU a popular choice for many different kinds of circuits.
As a result, the FQI17P06TU is a versatile and powerful solution for many different kinds of applications, from high speed switching circuits, to amplifiers and oscillators. It is also widely available and relatively inexpensive, making it a popular choice all around. The transistor\'s high current and low voltage, along with its fast switching speed and excellent performance all make it an ideal solution for a wide range of applications and circuit designs.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FQI13N50CTU | ON Semicondu... | 1.73 $ | 360 | MOSFET N-CH 500V 13A I2PA... |
FQI13N06LTU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 13.6A I2P... |
FQI13N06TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 13A I2PAK... |
FQI11P06TU | ON Semicondu... | -- | 1000 | MOSFET P-CH 60V 11.4A I2P... |
FQI1P50TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 500V 1.5A I2P... |
FQI17N08LTU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 80V 16.5A I2P... |
FQI17N08TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 80V 16.5A I2P... |
FQI17P06TU | ON Semicondu... | -- | 1000 | MOSFET P-CH 60V 17A I2PAK... |
FQI10N20CTU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 9.5A I2P... |
FQI15P12TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 120V 15A I2PA... |
FQI19N20CTU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 19A I2PA... |
FQI19N20TU | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 19.4A I2... |
FQI10N60CTU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 9.5A I2P... |
FQI11N40TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 400V 11.4A I2... |
FQI12N60CTU | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 12A I2PA... |
FQI12N60TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 10.5A I2... |
FQI12N50TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 500V 12.1A I2... |
FQI16N25CTU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 250V 15.6A I2... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...