Allicdata Part #: | FQI19N20CTU-ND |
Manufacturer Part#: |
FQI19N20CTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 19A I2PAK |
More Detail: | N-Channel 200V 19A (Tc) 3.13W (Ta), 139W (Tc) Thro... |
DataSheet: | FQI19N20CTU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 139W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1080pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 170 mOhm @ 9.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQI19N20CTU transistors are a kind of Field Effect Transistors, also known as FET. This type of transistor is an integral part of many electronic circuits due to its high level of control over current flow and its low power consumption. It has gained popularity in recent times due to the advancements in semiconductor technology, which makes it a popular choice for low power applications. This article will discuss the application field and working principle of FQI19N20CTU transistors.
Application Field of FQI19N20CTU Transistors
FQI19N20CTU transistors are used in a wide variety of applications. It is mainly used for low power applications such as battery-operated devices and other low voltage, low power devices. In addition, it is also used in frequency multipliers, amplifier stages, power switching amplifiers, and in RF (Radio-Frequency) applications. It is also used in many devices like cell phones, computers and other electronic gadgets.
Working Principle of FQI19N20CTU Transistors
FQI19N20CTU transistors operate based on the principles of a junction field effect transistor (JFET). JFETs are transistors that use the electric field between the source and drain terminals to control the current. This is different from the more common Bipolar Junction Transistors (BJTs) which use a current between the base and emitter to control the current.
The current in FQI19N20CTU transistors is controlled by applying a negative voltage to the gate terminal. This negative voltage reduces the electric field between the source and the drain, resulting in a decrease in current. By decreasing the electric field further, the current can be fully turned off. When the negative voltage is reversed, the electric field between the source and the drain increases and causes an increase in current.
FQI19N20CTUs are also known as enhancement-mode MOSFETs or E-MOSFETs. This is because in order to turn the transistor on, a small amount of voltage has to be applied to the gate. This is referred to as “enhancement” since the voltage causes the electric field between the source and the drain to increase.
FQI19N20CTUs are also used in circuits with mixed signal operations, where both analogue and digital signals coexist. This is because these transistors can convert analogue signals into digital signals, allowing for more efficient data transmission.
Advantages of FQI19N20CTU Transistors
FQI19N20CTU transistors offer a variety of advantages over BJTs. Firstly, they are more efficient and require less power to operate. They are also more versatile, and can be used in a variety of applications. Secondly, FQI19N20CTU transistors have a higher switching speed and lower thermal resistance compared to BJTs, making them suitable for high-speed applications. Finally, they are easier to design and use compared to BJTs, and can be used to construct less complicated circuits.
Conclusion
FQI19N20CTU transistors are an important component in many electronic devices and circuits. They are an effective and efficient way to control current and power up devices. Their advantages such as high switching speed, and low thermal resistance make them a popular choice for low power applications. Furthermore, their ability to convert analogue signals into digital signals makes them suitable for mixed signal operations.
The specific data is subject to PDF, and the above content is for reference
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