FQI13N06LTU

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK (TO-262)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.75W (Ta), 45W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	350pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	6.4nC @ 5V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	110 mOhm @ 6.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	13.6A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

FQI13N06LTU is a field-effect transistor (FET) manufactured by Fairchild Semiconductor, commonly used in power switching applications. FETs are three-terminal semiconductor devices in which voltage applied to one of the terminals can control an electric current between the other two terminals. FETs consist of two semiconductor terminals called source and drain, and a gate to control the current flow. In FQI13N06LTU, the source and drain are made of NMOS (N-channel MOSFET) on a silicon substrate. The FQI13N06LTU is a versatile component that is used in a variety of applications, from electric motor control to power switching.

Application Field

In general, FQI13N06LTU can be used in any application requiring power switching, such as automotive engine control, electronic load shedding, high frequency switching, and any situation where a low voltage switch is necessary. It is particularly useful for applications involving high current or very high voltages. Some common applications of FQI13N06LTU include:

• Power Converters
• Motor Control
• Switched Mode Power Supplies (SMPS)
• DC-DC Conversion (CCTV, LED drivers, medical applications, etc)
• Machine Control
• Electric Vehicle Chargers

Working Principle

FQI13N06LTU is an insulated gate field-effect transistor (IGFET) and it works on the principle of voltage-controlled resistance. In the FQI13N06LTU, the source and drain are made of an N-channel MOSFET which has an oxide layer separating it from the silicon substrate. The oxide layer acts as an insulator, preventing the current from flowing directly between the source and the drain.To turn the current on, a voltage must be applied to the gate. This voltage causes a polarization of the insulating oxide layer and forms a channel between the source and drain. This channel allows current to flow in either direction. By adjusting the voltage, the size of the channel is changed, and the current can be adjusted accordingly.To turn the current off, the voltage at the gate must be reduced. This reduces the size of the channel and prevents the current from flowing. This type of switching is ideal for many applications, as it requires only a small voltage to switch the current.

Conclusion

FQI13N06LTU is a versatile field-effect transistor that can be used in a variety of power switching applications. It works on the principle of voltage-controlled resistance and can be used to switch current on and off with very little voltage. This makes FQI13N06LTU an ideal choice for applications involving high current or very high voltages. Applications such as power converters, motor control, switched mode power supplies, DC-DC conversion, machine control, and electric vehicle chargers can all benefit from the use of FQI13N06LTU.

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