
Allicdata Part #: | FQI13N50CTU-ND |
Manufacturer Part#: |
FQI13N50CTU |
Price: | $ 1.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 13A I2PAK |
More Detail: | N-Channel 500V 13A (Tc) 195W (Tc) Through Hole I2P... |
DataSheet: | ![]() |
Quantity: | 360 |
1 +: | $ 1.56870 |
10 +: | $ 1.41687 |
100 +: | $ 1.13835 |
500 +: | $ 0.88535 |
1000 +: | $ 0.73359 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 195W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2055pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 480 mOhm @ 6.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FQI13N50CTU is a type of Field-Effect Transistor (FET). It belongs to the family of Single MOSFETs, which is a subset of power FETs. FQI13N50CTU is a surface-mount N-channel MOSFET, the highest power surface mount MOSFET available in the market.
FQI13N50CTU is known for its extremely low drain-source on-resistance, meaning that it is highly efficient and produces low power losses. It is also known for its extremely low thermal resistance, meaning that it can dissipate large power and voltage in a given area.
FQI13N50CTU also has a low output capacitance and low input capacitance, meaning that it has a low switching time, which can be extremely beneficial for high frequency applications. It is also known for its very low gate-source threshold voltage, which makes it ideal for switching applications.
In terms of its uses, FQI13N50CTU is mostly used in power conversion applications such as compact lighting, solid-state lighting, power supply, motor drives, and more. It is suitable for applications where space and power loss are important, and it can also be used in communications and automotive applications.
FQI13N50CTU works by transferring a modulated electrical current across an insulated gate which regulates the voltage between drain and source. When the control voltage is applied to the gate of the FET, the current flow is reduced or increased. This allows the FET to regulate the output voltage across the drain and source. When the control voltage is removed from the gate of the FET, the amplifier is turned off, and the drain and source voltages return to their original state.
FQI13N50CTU can be used in a wide range of applications, such as switching circuits, voltage regulators, amplifiers, and power converters. It can also be used in digital logic applications where low input capacitance and fast switching times are required. Additionally, it can also be used in power amplifiers and other high-frequency applications. Its extremely low on-resistance makes it an excellent choice for power converters.
In summary, FQI13N50CTU is a type of Field-Effect Transistor (FET) belonging to the family of Single MOSFETs. It is known for its extremely low drain-source on-resistance and low thermal resistance, making it suitable for power conversion applications. It is also known for its extremely low gate-source threshold voltage and fast switching speeds, making it ideal for a variety of applications. FQI13N50CTU also has a low output capacitance and low input capacitance, making it a great choice for high frequency applications. All these excellent features make FQI13N50CTU an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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