FQI15P12TU Allicdata Electronics
Allicdata Part #:

FQI15P12TU-ND

Manufacturer Part#:

FQI15P12TU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 120V 15A I2PAK
More Detail: P-Channel 120V 15A (Tc) 3.75W (Ta), 100W (Tc) Thro...
DataSheet: FQI15P12TU datasheetFQI15P12TU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 100W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 200 mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 120V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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FQI15P12TU is a Field-Effect Transistor (FET). It is a type of semiconductor device that is commonly used to confine and control the flow of electric charge, and most commonly used in many digital circuits. FQI15P12TU transistor is also a type of MOSFET (Metallic Oxide Semiconductor FET). It is a particular type of transistor transistor that utilizes a source, drain, and gate connection and functions by the gate’s modulation of the source-drain current.

FQI15P12TU Application Field

FQI15P12TU has a very broad range of uses in many applications. For example, it can be used in power supplies, motor drives, electronic switches, DC-DC converters, motor control, and power amplifier. It is also popular in wireless communication systems and automotive electronics.

Besides, FQI15P12TU can be used in battery charging control, load switches, lighting controllers, drive control, temperature controllers, and many more. Additionally, it can be used in industrial automation, power management, data acquisition systems, entertainment systems, and display and TV applications.

FQI15P12TU Working Principle

To understand how FQI15P12TU works, it is important to understand the structure and function of the transistor. The MOSFET is a four layers of alternating P-type and N-type semiconductor materials, which control a volume or current flow between two terminals. The terminals are known as the source, the drain, and the gate.

The FQI15P12TU has a P-type source and N-type drain. Applying positive voltage from the gate to the source will cause more electrons to flow from the drain to the source. This constitutes an "enhancement mode" MOSFET, as it increases with increasing gate voltage. This is the primary conduction mechanism of FQI15P12TU.

When the gate voltage is decreased, the current flowing from the drain to the source will reduce accordingly. When the gate voltage is negative, the current from the drain to the source is cut off, and the device is said to be "pinch off". This is known as the "depletion mode" and is the second conduction mechanism of FQI15P12TU.

In summary, FQI15P12TU transistors can be used in a variety of applications and comes with two conductive mechanisms that can be used to control electric flow: the enhancement mode and depletion mode.

The specific data is subject to PDF, and the above content is for reference

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