Allicdata Part #: | FQI11P06TU-ND |
Manufacturer Part#: |
FQI11P06TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 11.4A I2PAK |
More Detail: | P-Channel 60V 11.4A (Tc) 3.13W (Ta), 53W (Tc) Thro... |
DataSheet: | FQI11P06TU Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 53W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 175 mOhm @ 5.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.4A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQI11P06TU is a power field-effect transistor (FET) used in a variety of applications, including power control, lighting, and audio. It is a metal-oxide-semiconductor FET (MOSFET) with a single-die construction. The device uses an insulated gate to control the flow of current through its metal channel between source and drain terminals. Due to its simple construction, the FQI11P06TU is relatively easy to use and highly efficient, making it suitable for a variety of applications. In this article, we will discuss the application field and working principles of the FQI11P06TU.
The FQI11P06TU is primarily used as a power switch, allowing current to flow through electrical components when a certain voltage is applied to its gate. This type of switching allows for precise control of current and power through customization of the gate voltage. It is also used as a light switch and can be used to control LED lights and other lighting applications. In addition, it can be used in a variety of audio applications such as amplifiers and sound systems.
The working principle of the FQI11P06TU is based on the basic concept of field-effect transistor operation. When a gate voltage is applied, it causes a gate field which affects the current flow through the metal channel. By varying the gate voltage, the current flow can be precisely controlled. This application involves the use of an insulated gate to ensure that the operating voltages do not exceed the maximum ratings.
The FQI11P06TU is capable of operating at very high frequencies, which makes it well-suited for use in high speed applications. It is also able to handle large amounts of power, making it suitable for use in power control applications. It is also efficient with low power dissipation, making it ideal for applications that require high power efficiency.
The FQI11P06TU is also known for its temperature stability. The insulated gate can help keep the operating temperature within the specified limits and prevent damage to the device. The device also has an excellent thermal dissipation capacity, which helps to keep it cool during operation and prevent overheating.
In conclusion, the FQI11P06TU is an efficient and reliable power device used in a variety of applications. Its ability to accurately control current and power through precise gate voltage modulation makes it ideal for power control, lighting, and audio applications. It is also capable of operating at high frequencies and is designed to handle large amounts of power. Finally, its temperature stability and thermal dissipation capacity make it one of the most reliable and efficient power FETs on the market.
The specific data is subject to PDF, and the above content is for reference
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