Allicdata Part #: | FQI1P50TU-ND |
Manufacturer Part#: |
FQI1P50TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 500V 1.5A I2PAK |
More Detail: | P-Channel 500V 1.5A (Tc) 3.13W (Ta), 63W (Tc) Thro... |
DataSheet: | FQI1P50TU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 63W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 10.5 Ohm @ 750mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQI1P50TU is a type of single FET with a standard package and drain-source voltage of 50V which utilizes the latest MultiFET process. This type of FET is commonly used in applications such as power management, motor control, signal conditioning, and switched mode power supplies.
The FQI1P50TU is designed for low loss, high current, and high-temperature operation, making it a great choice for demanding power applications. This product can also be used in RF applications as a signal conditioning device.
The FQI1P50TU FET is designed for fast switching speeds, making it ideal for applications involving high-frequency circuits. The device has an RDS(on) of 0.68Ω and a maximum current rating of 15A. This makes the FQI1P50TU a great option for high-performance, low-power solutions.
In addition to its performance, the FQI1P50TU also offers superior reliability. The device is rated to last up to 3500 cycles at 250°C Junction temperature, making it well suited for extreme environmental conditions. Furthermore, the device\'s built-in ESD protection feature helps ensure that the FQI1P50TU can withstand high electrostatic discharge.
The working principle of the FQI1P50TU device is based on the basic FET principle. When a voltage is applied to the gate, an electric field is created that modulates the current flowing from the source to the drain. This enables the FET to act as a switch, allowing the user to control the current flowing through the device. This makes the FQI1P50TU an ideal device for power applications.
At the heart of the FQI1P50TU lies the latest Multi-FET technology. This advanced manufacturing process results in a device that is extremely efficient and robust, providing high performance and exceptional power density. Furthermore, the device offers unmatched reliability, making it a great choice for demanding applications.
The FQI1P50TU has many advantages and makes an ideal choice for applications involving motor control, signal conditioning, power management, and switching mode power supplies. With its unique combination of high current and low loss, the FQI1P50TU is a great option for power systems where performance and reliability are critical.
The specific data is subject to PDF, and the above content is for reference
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