FQI17N08LTU

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The FQI17N08LTU is part of the FQI family of advanced MOSFETs developed by FETs company. This particular type of FETs is a single, N-channel enhancement mode MOSFET, designed to operate in applications where switching performance, low gate charge and low on-resistance are desired. This MOSFET family utilizes a fully-depleted, laterally diffused metal oxide semiconductor (LDMOS) process with three times the power performance of standard MOSFET process.

The FQI17N08LTU has an on-resistance of 17 milliOhms (mOhms) at 4.5 volts. The associated gate charge is a low 5.6 nanocoulombs (nC). The drain-source breakdown voltage (BVDSS) is rated at 95 volts. The maximum continuous drain current (ID) is rated at 8 amperes (A), and the maximum power dissipation (PD) is 44 watts (W).

The FQI17N08LTU offers superior speed performance, with a fast switching speed of 25 nanoseconds (ns) typical and 30 picoseconds (ps) drain-source propagation delay. It also has a robust latch-up immunity, provided by superior bodipy layer process. The total gate charge (Qg) and drain-source on-resistance (Rds-on) are both low, enabling significantly lower power dissipation.

The FQI17N08LTU is particularly well-suited for applications that require low on-resistance, fast switching speed and low gate charge, such as switchmode power supplies and portable devices. It can also be used in applications where ultra-low Rds-on and Qg are necessary, such as motor control, high frequency switching and synchronous rectification. Additionally, the low gate charge and low on-resistance make the FQI17N08LTU ideal for space-constrained designs, such as those found in cellular phones and automotive systems.

The basic working principle of any MOSFET device is based upon the application of an external gate voltage, which controls the current flow from the drain to the source. When the voltage applied to the gate terminal is higher than the threshold voltage, the transistor is turned “on” and current begins to flow from the drain to the source. Conversely, when the voltage applied to the gate is lower than the threshold voltage, the current stops flowing, and the transistor turns “off”. Thus, by applying a positive voltage to the gate terminal, the FQI17N08LTU can be used to create an electronic switch, capable of controlling the passage of current through the load.

In summary, the FQI17N08LTU is an N-channel enhancement mode MOSFET designed for applications where low on-resistance, fast switching and low gate charge are desired. This family of devices offers superior performance, with on-resistance of 17 mOhms, gate charge of 5.6 nC and excellent switching speed of 25 ns typical and 30 ps drain-source propagation delay. Furthermore, the low gate charge and low on-resistance make the FQI17N08LTU ideal for space-constrained designs. When a suitable voltage is applied to the gate terminal, the FQI17N08LTU can be used to create an electronic switch, capable of controlling the passage of current through the load.

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