Allicdata Part #: | FQI12N60TU-ND |
Manufacturer Part#: |
FQI12N60TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 10.5A I2PAK |
More Detail: | N-Channel 600V 10.5A (Tc) 3.13W (Ta), 180W (Tc) Th... |
DataSheet: | FQI12N60TU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 180W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 54nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 700 mOhm @ 5.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.5A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQI 12N60TU is an enhancement-mode, N-channel, insulated gate field-effect transistor (IGFET), which synthesizes a few different physical effects to get the desired function. This device combines the off-state low-leakage capability of MOSFET with the improved avalanche performance of a silicon-controlled rectifier (SCR). It offers a wide range of applications such as RF power amplification and energy-efficient motor control.
The FQI 12N60TU is a three-terminal device that provides superior performance in applications demanding high switching speed, low on-state resistance, excellent noise immunity, and high efficiency. When an appropriate voltage is applied to the source and drain, the gate voltage distributes across the surface of the transistor and gives rise to a region of charge carriers near the interface between the gate and the substrate. This region of charge carriers, known as the channel, attracts carriers from the source, allowing them to flow through the transistor and governs the current passing through it.
The FQI 12N60TU is normally off, providing superior resistance when compared to many other MOSFETs. An applied gate voltage allows the channel to conduct, while a negative voltage turns the FQI 12N60TU off. When the gate voltage is below its threshold, the device is completely off and presents a high voltage off-state breakdown voltage. This ensures that the device can withstand high voltages without breaking down. Similarly, when the gate voltage reaches its threshold, the device begins to conduct and the current passing through the channel is controlled by the magnitude and duration of the applied gate voltage.
The FQI 12N60TU also provides superior noise immunity, providing good performance even in a noisy electrical environment. This is due to its robust design, which separates the drain and source from the gate and protects it from possible electrical interference. It also offers high reliability and endurance due to its power-efficient operation.
The FQI 12N60TU is an ideal choice for applications where fast switching speed, low on-state resistance, and noise immunity are of utmost importance. These include RF power amplifiers, motor control systems, load switches, switched-mode power supplies (SMPS), and DC-DC converters. Furthermore, its small size and low cost make it ideal for applications where space and cost are limited.
In conclusion, the FQI 12N60TU is an industrial-grade N-channel insulated gate field-effect transistor, which combines the off-state low-leakage capability of MOSFET with the improved avalanche performance of an SCR. It allows for high switching speed, low on-state resistance, excellent noise immunity, high reliability, and cost-effectiveness. The FQI 12N60TU is widely used in a variety of applications, such as RF power amplifiers, motor control systems, load switches, switched-mode power supplies, and DC-DC converters.
The specific data is subject to PDF, and the above content is for reference
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