FQP20N06L

FQP20N06L is a Field-Effect Transistor (FET) produced by Fairchild Semiconductor. It is an N-Channel enhancement mode buried oxide insulated gate bipolar transistor (IGBT) designed for high voltage, low current applications such as automotive and industrial, where low on-state resistance and fast switching speed are required. FQP20N06L is available in TO-220, TO-220F, TO-220FP, TO-252, and others packages.

FQP20N06L Application Field and Working Principle

FQP20N06L is typically used in applications such as switch-mode power supplies, automotive and industrial motor control, and general purpose switching. It is designed for low-side, non-isolated and low-voltage switching applications that require medium-to-high side current. It is typically used in applications with voltage ratings up to 200V and current ratings up to 10A.

Due to the fact that an FET is a voltage-controlled device, the gate to drain voltage VGS is the controlling factor. A small change in gate to drain voltage can have a large impact on the drain-to-source current. VGS also controls the on-state resistance of the FET, so that when VGS is increased, the drain-to-source resistance is reduced. When VGS is small, the current will be large, however, the resistance will be large, leading to a lower power efficiency in the system.

FQP20N06L is an enhancement mode device, which means that it must be driven in an enhancement mode in order to work correctly. This is done by providing a positive gate to drain voltage to the FET in order to turn it on. Once the gate voltage is removed, the FET will turn off, thereby allowing for fast switching speeds.

FQP20N06L has a maximum operating temperature of 150°C, a drain to source voltage rating of 200V, and a maximum drain current of 10A. It is designed for low-side, non-isolated and low-voltage switching applications that require medium-to-high side current. It is designed for use in switch-mode power supplies, automotive and industrial motor control, and general purpose switching.

FQP20N06L is known for its high speed switching, low on-state resistance, temperature stability and superior immunity to latch-up. It is also highly reliable and long-lasting, making it a great choice for high voltage and low current applications.