Allicdata Part #: | FQP27P06-ND |
Manufacturer Part#: |
FQP27P06 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 27A TO-220 |
More Detail: | P-Channel 60V 27A (Tc) 120W (Tc) Through Hole TO-2... |
DataSheet: | FQP27P06 Datasheet/PDF |
Quantity: | 479 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 13.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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Introduction
The FQP27P06 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is a fully-depleted, planar, enhancement-mode power MOSFET ideal for switching and/or amplifier applications. This device offers superior performance compared to discrete MOSFETs, with dynamic characteristics such as fast switching speed, low gate charge, low on-resistance, and low capacitance.
Application Field
The FQP27P06 is widely used in a variety of applications. It can be found in high-current switches (typically up to 6 Amps), audio circuits, motor circuits, and voltage regulation circuits. This device can also be used in switched-mode power supplies, DC-DC converters, and other applications requiring high power-switching, such as automotive and industrial circuits.
Working Principle
The FQP27P06 is an N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is composed of a semiconductor channel that connects the source and the drain regions. When the gate voltage is increased, an electric field is created across the channel, which in turn increases the conductivity and the current can flow from the source to the drain. Conversely, when the gate voltage is decreased, the channel conductivity is reduced and the current is prevented from flowing from the source to the drain.
The FQP27P06 is an enhancement-mode power MOSFET. This means that it does not need a gate voltage to turn it on. Instead, the device will turn on when the gate voltage supplied to it is gradually increased. This enables the device to be used in applications like audio and motor circuits, where it is important to have a gradual on-state current.
Package Options
The FQP27P06 is available in two different packages. It is available in a TO-220 package, which is suitable for through-hole applications. It is also available in an SMD (Surface Mount Device) package, which is suitable for surface mounting on printed circuit boards.
Advantages
The FQP27P06 offers a variety of advantages over traditional bipolar transistors and regular MOSFETs. Firstly, it is a fully-depleted power MOSFET, which allows it to have a higher breakdown voltage than a regular power MOSFET. Secondly, it is capable of switching high current loads, and it has a low on-resistance, which results in lower losses associated with turning devices on and off. Additionally, its low gate charge, low capacitance and fast switching speed enable it to be used in a variety of applications.
Conclusion
The FQP27P06 is a N-channel MOSFET suitable for a wide range of applications, such as high-current switching, audio circuits, motor circuits, and voltage regulation circuits. It is available in both TO-220 and SMD packages and offers a variety of advantages over traditional transistors, such as its planar structure, low capacitance and fast switching speed. Therefore, the FQP27P06 is an ideal choice for a variety of applications requiring high power-switching.
The specific data is subject to PDF, and the above content is for reference
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