FQP2N50

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FQP2N50 is a field-effect transistor (FET) from Nexperia\'s discrete semiconductor range, available in the TO-220AB. It is a single N-channel MOSFET, offering low on-state resistance, high-speed switching, exceptional power handling and ESD protection.

Application fields

FQP2N50 is suitable for automotive applications, power switching and new power amplifiers designs. Due to its low on-state resistance, it offers reduced power losses, allowing designers to achieve higher power efficiency. It is also useful in high-current, DC-DC converter applications including synchronous rectification, and in the DC-AC inverter section of renewable energy applications, due to the high-current handling capability and the high-speed switching of the FQP2N50 forming the bridge of this section.

Additionally, in applications requiring anti-parallel operation of MOSFETs, such as motor control applications and circuit configurations requiring high-frequency voltage boosting, the FQP2N50 LN is suitable for these applications, as it can handle relatively high currents at medium frequencies, making it suitable for power delivery networks and other control and drive applications.

Working Principle

The FQP2N50 is a N-channel Power MOSFET which works with a gate-controlled channel. The channel of a MOSFET is created between the source and drain terminals and is fully opened or closed via the gate terminal. This is different from bipolar transistors, where the collector-emitter region is opened or closed depending upon the base current.

The FQP2N50 contains a silicon gate oxide which is connected to the gate pin, and an N-type doped area which surrounds the gate oxide. When the gate pin is left open, the channel between the source and drain is cut off so no current can flow through. When a negative voltage is applied to the gate pin, the top of silicon gate oxide expands, allowing current to flow through from the source to the drain.

The on-state resistance of the FQP2N50 is very low, which means a greater current can flow from the source to the drain at a lower voltage than other power MOSFETs. This is one of the reasons why FQP2N50 is preferred in applications where low on-state resistance and low voltage are important.

The N-channel MOSFET also has an intrinsic body diode which is connected internally between the source and drain terminals, however this is only useful in reverse-biased operation or flyback operations. This diode helps to protect the FET from high peak currents, act as a freewheeling diode, and also helps to reduce EMI emissions.

FQP2N50 features a robust package with copper clip for heat dissipation. The packaging in addition to the low on-state resistance reduces thermal issues, allowing the FET to handle high power without getting damaged. They also offer protection against transient overstresses and ESD which allow them to handle high voltage spikes due to inductive switching. This makes them suitable for automotive applications and in noisy industrial environments.

Overall, FQP2N50 is a reliable power MOSFET offering low on-state resistance and high-speed switching. It is suitable for a wide range of applications, including automotive and renewable energy, power delivery networks, motor control, and circuits requiring high-frequency voltage boosting. Its robust packaging with copper clip for heat dissipation and integrated protection features makes it ideal for harsh and noisy environments.

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