FQP2N60C

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The FQP2N60C MOSFET is a high-performance silicon-based power MOSFET (metal-oxide-semiconductor field-effect transistor) that enables extremely low on-resistance, making it desirable for power supply and audio applications.

FQP2N60C employs an advanced, high-precision process design, making it capable of delivering ultra-low on-resistance. This results in a device with the highest combination of switching speed, low power loss and maximum power transfer in small-signal applications. With this MOSFET, applications that rely on high speeds can realize a greater degree of performance and improved power efficiency.

The FQP2N60C can be used in a wide range of switchmodes and DC/DC converters, and is particularly suitable for motor control and drive systems such as switchmode power supplies, AC/DC converters, LED drivers and power control circuits. It is also useful in high-frequency power circuit designs used in industrial applications.

The FQP2N60C operates on the principle of a field effect transistor (FET), meaning its source/drain current is open/closed as a result of the conductivity of the channel being controlled by the voltage of the gate terminal. This allows the FQP2N60C to act as a switch, controlling current flow in either an analog or a digital signal. A key benefit of this transistor is that the high frequency operation can be maintained over a wide temperature range with minimal distortion.

This FET has both an n-channel and a p-channel version, providing flexibility for the user to choose. The p-channel version provides excellent reverse leakage current, making it ideal for applications in which reverse current drain must be avoided. The n-channel FQP2N60C is designed with breakdown voltage (BV) ratings from 75VDC to 100VDC, allowing it to handle a wide range of power requirements.

When compared to other transistors of its type, the FQP2N60C is unique in that it has a low "on" resistance—making it much faster than traditional transistors. Its low gate-drain capacitance and low gate charge make it ideal for applications requiring high-current pulses, such as stepper motors, audio amplifiers, and appliances. Its low gate threshold voltage also provides power savings in applications with digital switching or intermittent operation.

The FQP2N60C is highly reliable and can withstand a peak voltage of up to 500 V. It also features ESD protection, redundancy and latch-up protection.

In summary, the FQP2N60C is an efficient and reliable power MOSFET that can be used for a variety of applications that require quick switching and low power loss. With its high speed and low on-resistance, it is highly suitable for use in motor control applications and switchmode power supplies, making it one of the most popular transistors in the market today.

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