Allicdata Part #: | FQP2NA90-ND |
Manufacturer Part#: |
FQP2NA90 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 2.8A TO-220 |
More Detail: | N-Channel 900V 2.8A (Tc) 107W (Tc) Through Hole TO... |
DataSheet: | FQP2NA90 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 107W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 5.8 Ohm @ 1.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.8A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQP2NA90 is a single N-channel enhancement mode MOSFET (otherwise known as a Metal–Oxide–Semiconductor Field-Effect Transistor) produced by Fairchild Semiconductor. It is a low-voltage device; the drain-source voltage (VDS) is -55V and its breakdown voltage is -55V. This device is rated for a drain current (ID) of 16A and a gate-source voltage (VGS) of -26V, making it suitable for use in many power control applications. It has a maximum power dissipation of 60W so it can safely handle large levels of power. It also has a very low ‘on’ resistance of 0.033 Ohms, allowing for greater efficiency when running at full power. In addition, its low capacitance ensures that this device has very good switching characteristics.
FQP2NA90 can be used in a variety of different applications, but is primarily used in the power control field. Its high current rating and low on resistance make it suitable for high power systems. It can be used in motor control, heater control, and even in power supplies. It is also very commonly used in automotive applications such as fuel injection systems and ABS systems. Furthermore, it can be used in many other types of applications, such as industrial process control, home automation, medical equipment, and laser printers.
The fundamental principle behind the operation of any MOSFET is the concept of an electric field controlling the flow of current through the device. Essentially, the gate of the FQP2NA90 acts as an electronically operated switch, allowing current to flow from the source to the drain when the switch is in the ‘on’ position. By using a voltage at the gate, the amount of current flowing through the device can be controlled, allowing for accurate power control.
The FQP2NA90 uses a design called ‘depletion mode’, which means that by applying a positive voltage at the gate, the FET will become ‘on’ and allow current to flow. If a negative voltage is applied, then the FET will turn ‘off’ and will not allow current to flow. This is known as a ‘reversed biased’ configuration and is commonly used in many applications. The drain and source terminals of the FQP2NA90 form a p–n junction, allowing for appropriate current control.
The FQP2NA90 has a range of applications and is suitable for many power control systems. It has a high current rating and low on resistance, making it perfect for high power applications. It can be used in motor control, heater control, fuel injection systems and ABS systems. Its low capacitance ensures good switching characteristics, and its low overall design makes it perfect for many applications.
The specific data is subject to PDF, and the above content is for reference
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