| Allicdata Part #: | FQP2N40-F080-ND |
| Manufacturer Part#: |
FQP2N40-F080 |
| Price: | $ 0.79 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 400V 1.8A TO-220 |
| More Detail: | N-Channel 400V 1.8A (Tc) 40W (Ta) Through Hole TO-... |
| DataSheet: |  FQP2N40-F080 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.71820 |
| 10 +: | $ 0.62685 |
| 100 +: | $ 0.48378 |
| 500 +: | $ 0.35834 |
| 1000 +: | $ 0.28667 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 40W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 5.5nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 5.8 Ohm @ 900mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
| Drain to Source Voltage (Vdss): | 400V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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FQP2N40-F080 is a type of MOSFET that functions as an electronic switch to control current in a circuit. As the name suggests, it is a single transistor meaning it requires only a single circuit. The FQP2N40-F080 MOSFET is capable of operating in high current, high voltage, and high frequency ranges. This makes them suitable for a wide range of applications such as power management, battery management, motor control, and switching applications.
FQP2N40-F080 MOSFETs feature a large source-to-drain breakdown voltage range of 40V. They also feature a very low on-state resistance of 0.8ohms, allowing for efficient energy management. Additionally, FQP2N40-F080 MOSFETs have fast switching speed, excellent switching power losses, and high temperature operation all of which make them ideal for more power intensive applications.
FQP2N40-F080 MOSFETs can be used in applications such as DC-DC converters and power supplies, DC battery charging systems,and motor control, power switching, low- and high-power inverters. In addition, they can be used in a variety of communication systems such as mobile phones, LED lighting, and satellite communications.
The working principle of the FQP2N40-F080 MOSFET is based on the current flow activation of the device. The gate terminal of the MOSFET is responsible for controlling the current flow through the device. When a voltage is applied to the gate terminal, it causes the current to flow from source to drain. Additionally, the gate-to-source voltage of the FQP2N40-F080 is held below 6V during normal operation, which reduces the leakage current and ultimately improves power efficiency.
In a nutshell, FQP2N40-F080 is a single MOSFET that is suitable for high power, high current, and high frequency applications. Its low on-state resistance, fast switching speed and high temperature operation make it ideal for motor control and power management systems. Its working principle is based on current flow activation and its source-to-drain breakdown voltage range is 40V.
The specific data is subject to PDF, and the above content is for reference
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