Allicdata Part #: | FQP2P25-ND |
Manufacturer Part#: |
FQP2P25 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 250V 2.3A TO-220 |
More Detail: | P-Channel 250V 2.3A (Tc) 52W (Tc) Through Hole TO-... |
DataSheet: | FQP2P25 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 1.15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.3A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQP2P25 is part of a family of Field-Effect Transistors (FETs) that\'re known for their excellent switching performance and low on-resistance. While this form of transistor is often employed in modern circuit design specifically for its low on-resistance characteristics, FQP2P25 is particularly suited to applications where fast switching is a necessity, such as controlling the direction of a DC motor or switching power supply rails.
At its most basic, a FET is a three terminal device consisting of a source, drain and gate electrodes. A FET works by introducing a barrier between the source and drain terminals that varies depending on the voltage applied to the gate. Applying a positive voltage to the gate will create a region of high electron mobility near the terminals, resulting in increased current flow. Applying a negative voltage will leave a region of low electron mobility, reducing the current flow. This fundamental voltage controlled current flow is the core function of the FQP2P25 and it is this which makes it suitable for fast switching applications.
The maximum drain-source voltage (VDS) rating of the FQP2P25 is 25V, allowing it to switch power supply rails of up to 25V. It also has a maximum drain current (ID) of 11A at 25°C, making it perfect for applications involving high current loads. In terms of switching speed, the FQP2P25 can be switched in as little as 7ns – making it suitable for powering quickly changing motor controllers.
One benefit of the FQP2P25 compared to other FETs is its low on-resistance (RDS-on). This is the resistance between the drain and source pins when the MOSFET is in the "on" state and is often used to gauge the quality of a transistor. The lower the RDS-on value of the transistor, the less resistance is encountered by the current flowing between the source and drain terminals. This results in improved efficiency and reduced power wastage.
FQP2P25 also offers a low gate source threshold voltage (VGS) of 1.5V, meaning it can be easily controlled using a small 3.3V logic signal. For applications requiring a large number of FQP2P25s in order to control high currents, chips like the IRLF3232PBF can be used. This is an 8 channel integrated MOSFET driver IC, allowing for up to 8 FQP2P25s to be driven using a single logic signal.
The FQP2P25 has a variety of uses in many applications, from motor control to power supply switching. Its excellent switching performance and impressive current handling ability make it an ideal choice for use in high current applications, such as motor control, brushed motor drives and H-bridge motor controllers. In addition, with its low RDS-on value and fast switching speeds, the FQP2P25 is perfect for switching sensitive circuits and controlling digitally driven loads. With the added bonus of being relatively low cost and available from most electronics suppliers, the FQP2P25 is an excellent choice for a wide range of circuit design applications.
The specific data is subject to PDF, and the above content is for reference
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