Allicdata Part #: | FQP2N60-ND |
Manufacturer Part#: |
FQP2N60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 2.4A TO-220 |
More Detail: | N-Channel 600V 2.4A (Tc) 64W (Tc) Through Hole TO-... |
DataSheet: | FQP2N60 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 64W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 4.7 Ohm @ 1.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Description
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< p >The FQP2N60 is a Dual N - Channel Power MOSFET with an operating voltage range of 900 to 1000V. This device has a drain source breakdown voltage (BVDSS ) of 100V and a drain current capability of 60A - Continuous. The FQP2N60 has a dynamic drain source on - resistance (RDS(on) ) of 5.6 Ohm and an avalanche energy rating of 250 mJ. Due to its extremely low on - resistance and low input capacitance, this device provides excellent power efficiency in a wide range of applications such as high wattage power supplies, BLDC motors and automotive systems. < /p >< p >The FQP2N60 operates in depletion - mode. When a voltage is applied to the gate of the FQP2N60, the effective channel resistance between drain and source electrodes decreases to nearly zero. This allows current to flow freely between the two electrodes. As the voltage on the gate continues to increase, the channel resistance will continue to decrease and the device will be driven into saturation. In this state, the resistance between the drain and source can remain as low as 5.6 Ohm, allowing large currents to flow. < /p >< p >The FQP2N60 can be used in switching applications where high current and efficient switching performance is required. Due to its low on - resistance and low input capacitance, this device is ideal for use in high power switching applications. It can also be used in applications such as synchronous rectification, AC/DC power supplies, inverters, active PFC and battery charging systems. < /p >< p >The FQP2N60 has low input capacitance and high switching speed, making it ideal for use in lighting applications. This device is also well suited for use in LED drivers, LED lighting, LED strips and LED displays. < /p >< p >In addition to its use in high power switching applications, the FQP2N60 can also be used in automotive applications such as active power factor correction (APFC) and DC/DC converters. This device is also well suited for use in battery chargers, DC/AC inverters, power supplies and motor drivers. Due to its low on - resistance and low input capacitance, this device can provide excellent power efficiency in these applications. < /p >< p >The FQP2N60 is a versatile device suitable for use in a wide range of applications where high current and efficient switching performance is required. This device is well suited for use in high wattage power supplies, automotive systems and lighting applications. < /p >The specific data is subject to PDF, and the above content is for reference
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