FQP2N30

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	40W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	130pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	5nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	3.7 Ohm @ 1.05A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2.1A (Tc)
Drain to Source Voltage (Vdss):	300V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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FQP2N30 is a field effect transistor (FET) designed to be used in various applications. This single FET has a source, gate and drain connected with a single p-type substrate. It is a high performance, low power type of device that is mainly used in switching, analog circuitry and high frequency applications.The FQP2N30 is a N-Channel FET, which means it is used to amplify and/or switch electronic signals between its three components: source, drain and gate. This type of device has a low voltage threshold, and it works by creating an electric field in the space between its source and drain, that is regulated by the potential of the gate. The gate is the control for the electric field and its potential determines the resistance between the source and the drain. As the field increases, the resistance decreases and the current passes through. When the field is removed (by reducing the gate potential) the resistance increase and the current cuts off.The FQP2N30 is usually used in high frequency applications because of its low gate threshold and high current density. Its gate threshold is typically around 4 volts and can handle up to -3A of current at a frequency of 1000kHz. It is typically found in power management, switching and amplifying circuitry.In terms of the design and fabrication of the FQP2N30, it is composed of two independently formed diffusion layers in a single planar structure with a common source. The layers are perpendicular to each other and then connected to the source and drain by a metallisation layer. The gate electrode is then connected to the planar active region between the two diffusion layers, and is contacted by thin gold or gold-tin alloy lines.The FQP2N30 is a very power efficient type of FET because itFeature="L does not require a high DC current hold when the device is on. Its gate-drain and gate-source thresholds are typically around the 4 volt range, which is far lower than most other types of FETs. This ensures a low voltage operation compared to other types of FET devices.In terms of operation, the FQP2N30 works with current flowing through the drain when the gate-source threshold is overcome. This allows current to flow between the source and the drain, which is regulated by the gate potential. When the gate potential is reduced, the current will be cut off and the device will not conduct electricity between source and drain.Overall, the FQP2N30 is a high performance, low power FET which is mainly used in switching, analog circuitry and high frequency applications. Its low voltage threshold ensures a low voltage operation and its gate-drain and gate-source thresholds are typically around the 4 volt range - which is far lower than most other types of FETs. This ensures power efficiency and makes the FQP2N30 a great option for many applications.

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