FQP2N90

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	85W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	500pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	7.2 Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2.2A (Tc)
Drain to Source Voltage (Vdss):	900V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

The FQP2N90 is a N-Channel Field Effect Transistor (FET) that exhibits low drain source on resistance, high maximum current and low threshold voltage. It is designed for use in high-power analog, digital and high-frequency switching applications. The FQP2N90 is typically used in high power switching and circuit switching which requires a high level of efficiency. In this article, we will discuss the FQP2N90 application field and working principle.

Applications

FQP2N90 is designed for high power switching and can be used in power supplies, motor drives, DC-DC converters, switch mode power supplies and various switching applications. It is ideal for switching applications that require high efficiency and high speed. FQP2N90 can also be used in high-current loads, including Zener diode and SCR applications.The FQP2N90 can be used in a variety of switching applications, including low side applications such as solid state devices, home appliances and industrial machinery. It can also be used for high side applications such as motorcycle starters, automotive power management systems and power supplies.FQP2N90 has a wide range of applications in the fields of telecommunications, automotive, industrial, automotive control and medical devices. It can be used in applications such as LED lighting, motor control and pulse width modulation (PWM).

Working Principle

FQP2N90 is a power MOSFET. It uses a gate to control the flow of electrons and current between the source and drain of the transistor. When the gate is charged, an electric field is created between the drain and source, thereby causing current to flow. The amount of current flowing through the transistor is proportional to the voltage applied to the gate.The FQP2N90 is an N-Channel power MOSFET. It is constructed with a p-type semiconductor substrate, a gate electrode, a source electrode and a drain electrode. When the gate voltage is increased, more electrons are directed towards the drain electrode and a larger current flows. This is referred to as increasing the Transconductance.The FQP2N90 has a low on-state resistance which makes it suitable for switching applications with high frequency switching up to 5 MH. It has a low threshold voltage and a high current level. This makes the FQP2N90 an efficient device for switching applications requiring high efficiency and low energy consumption.

Conclusion

The FQP2N90 is a N-Channel Field Effect Transistor (FET) with low drain source on resistance, high maximum current and low threshold voltage. It is suitable for many applications in the fields of telecommunications, automotive, industrial and medical devices. It is typically used in high-power analog switching and circuit switching which requires a high level of efficiency. The FQP2N90 has a low on-state resistance which makes it suitable for switching applications with high frequency switching up to 5 MH. The FQP2N90 is an efficient device for switching applications that require high efficiency and low energy consumption.

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