Allicdata Part #: | FQP24N08-ND |
Manufacturer Part#: |
FQP24N08 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 80V 24A TO-220 |
More Detail: | N-Channel 80V 24A (Tc) 75W (Tc) Through Hole TO-22... |
DataSheet: | FQP24N08 Datasheet/PDF |
Quantity: | 527 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FQP24N08 is a type of Field-Effect Transistor (FET) which belongs to the family of single MOSFETs. It is an n-channel enhancement type MOSFET which is used in many applications such as power supplies, audio amplifiers, voltage control circuits and electronic switches. This type of MOSFET is able to deliver high performance, power efficiency and reliability. As such, it is often used in devices that require high reliability and performance.
The FQP24N08 is composed of two terminals: the Gate and the Drain. The Gate is linked to the source of the transistor and to the substrate, while the Drain is connected to the substrate. The FQP24N08 has a very low ‘on-state’ resistance compared with other FETs, meaning that it can more efficiently switch electrons on and off at higher current levels. It also features an improved thermal resistance, making it able to withstand high temperatures.
The working principle of the FQP24N08 follows the same principles as other MOSFETs. Due to its construction, the FQP24N08 has a few key differences, but the main goal remains the same: to control current flow. When a voltage is applied to the Gate terminal, a reverse bias creates an electric field between the Gate and the substrate. This creates an even distribution of electrons around the gate and the substrate, which attracts new electrons to the Gate.
The increased electron concentration around the Gate, coupled with a voltage applied to the Drain, creates a drain current. This current can then be regulated and amplified by altering the voltage applied to the Gate. This effect is known as voltage control, and it is this regulation of current that makes the FQP24N08 a great choice for power supply, audio and other related applications.
In addition to its electrical properties, the FQP24N08 has some great physical characteristics such as its compact size, inexpensive manufacturing, and greater power efficiency. This makes it a great choice for portable and embedded devices that require high performance and reliability. The FQP24N08 can also be used in power switches, voltage regulators, audio amplifiers, and more.
The FQP24N08 is a great example of the power and reliability that can be achieved with MOSFETs. It is a robust device that can be used in a wide variety of applications, from audio amplifiers to voltage control circuits. The FQP24N08 combines great performance, power efficiency, and reliability, making it an ideal choice for many designs.
The specific data is subject to PDF, and the above content is for reference
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