Allicdata Part #: | FQP30N06FS-ND |
Manufacturer Part#: |
FQP30N06 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 30A TO-220 |
More Detail: | N-Channel 60V 30A (Tc) 79W (Tc) Through Hole TO-22... |
DataSheet: | FQP30N06 Datasheet/PDF |
Quantity: | 11522 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 945pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FQP30N06 is a type of Field-Effect Transistor (FET) developed by Fairchild Semiconductor Corporation for today’s increasingly powerful electronics. The FQP30N06 is powerful, compact and economical, giving efficient and accurate performance in a variety of circuits and applications. As a single FET, it allows the efficient performance of both switching and amplification tasks.
The FET is a three-terminal device, and each of its terminals has a specific function: The gate, drain and source. When a voltage is applied to the gate terminal, the FET begins to conduct current and the drain and source terminals provide the paths for current flow. The FET can then be used to switch or amplify signals.
The FQP30N06 is an N-Channel, Enhancement Mode Field-Effect Transistor designed for general-purpose switching and amplifier applications. Unlike most traditional FETs, the FQP30N06\'s gate-to-source voltage (VGS) is variable, which allows for the adjustment of the transistor\'s “on” state and operating parameters. This makes it possible to adjust idling current, voltage drop, output power and switching speeds.
Furthermore, the FQP30N06\'s source-drain breakdown voltage (VDSS) is rated as 30 V, which is higher thanstandard FETs, providing better protection against damage. The FQP30N06 also possesses a low on-state resistance (Rdson) of 9 mΩ, giving it the ability to transfer large amounts of current very quickly, ideal for high-power applications such as battery charging, power management and DC–DC converters. The FET also has a drain current capability of up to 15 A, could be used for large power applications.
The FQP30N06 is also a relatively low-cost, highly compatible device that can be used with a wide variety of circuit configurations. In power supply applications, the FQP30N06 can be used to quickly switch DC voltage and, due to its low on-resistance, can also regulate current levels, thus providing precise control. In addition, in audio applications, it can amplify digital music signals, as well as be used as a volume/tone control, providing accurate and precise control over the sound levels. Finally, in automotive applications, the FQP30N06 can be used with low power interlock circuits, vehicle lighting and dead-battery protection.
The FQP30N06 is a reliable and powerful device, and the ability to adjust its operating parameters give it unusual adaptability for a host of applications. The FQP30N06 is an indispensable component for reliable and efficient components, and is especially useful for applications where power, speed and accuracy are paramount.
The specific data is subject to PDF, and the above content is for reference
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