| Allicdata Part #: | FQP32N20CFS-ND |
| Manufacturer Part#: |
FQP32N20C |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 200V 28A TO-220 |
| More Detail: | N-Channel 200V 28A (Tc) 156W (Tc) Through Hole TO-... |
| DataSheet: |  FQP32N20C Datasheet/PDF |
| Quantity: | 15195 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 156W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 82 mOhm @ 14A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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FQP32N20C is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by Fairchild Semiconductor. It is a power FET, ideal for high power switching and low ON-resistance. It is usually used in switch mode power supplies, converters, DC-DC preregulators, motor drivers and high speed switching.
It has a Vgs, which is the Gate-Source Voltage of 20 volts and a maximum drain current of 32 amperes. It is encapsulated in a plastic TO-220 package, which ensures excellent heat dissipation. The FQP32N20C has a low crss of 0.27 ohms and can handle drain-source voltages up to 200 volts.
The FQP32N20C works on the principle of depletion-mode MOSFET, where the FET is in the “ON” state (meaning high conduction path from drain to source) even without the gate voltage applied. The conduction path is “ON” because of the positive charges that are present in the area between the source and the drain.
When a voltage is applied to the gate terminal, the positive charges create a depleted region between the source and drain, thus creating a threshold voltage. This threshold voltage affects the current that flows through the FET by either allowing or disallowing it to pass through.
The FQP32N20C offers excellent performance when it comes to switching applications. It is capable of switching at relatively high frequencies and switching very low voltages. It is also a good choice for high-speed switching applications since its tight pinch off voltage and Surge SOA (Safe Operating Area) is excellent.
In conclusion, the FQP32N20C is a reliable and efficient MOSFET, which is ideal for high power switching applications. It operates on the principle of depletion-mode MOSFET and offers excellent performance when it comes to switching applications. It is capable of switching at relatively high frequencies and switching very low voltages.
The specific data is subject to PDF, and the above content is for reference
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|---|
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