Allicdata Part #: | FQP33N10L-ND |
Manufacturer Part#: |
FQP33N10L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 33A TO-220 |
More Detail: | N-Channel 100V 33A (Tc) 127W (Tc) Through Hole TO-... |
DataSheet: | FQP33N10L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 127W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1630pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 5V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 52 mOhm @ 16.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQP33N10L is a N-channel Enhancement Mode MOSFET transistor. It is widely used in power management and other applications due to its superior current and power handling capabilities. The FQP33N10L has low input capacitance, low spread of threshold voltage, and low on-resistance. It is a versatile transistor with many applications in various industries.
The FQP33N10L is an enhancement-mode Field-Effect Transistor (FET). It is made up of two parts: the source and the drain. The source and the drain are connected to a semiconductor layer which consists of an N-type (Negative) material, and the gate is connected to a conductive material. When a current is applied to the gate, the transistor\'s conductivity is enhanced, thereby allowing for current to flow from the source to the drain.
The FQP33N10L features a 2.2V minimum breakdown voltage (BVdss) with a continuous drain current up to 9.5A and a peak pulse drain current of 250A. It also has a low gate-to-drain charge of 6.1nC. These characteristics make this device ideal for use in low-voltage applications such as power management, switching, and motor controls. In addition, it has a low on-state resistance (Rds on), making it very efficient in energy utilization.
Due to its high power and low on-state resistance, the FQP33N10L is suitable for applications such as boost and buck converters, motor drivers, power management circuits, and other high-current applications. The FQP33N10L also has a high threshold voltage, which allows it to switch power efficiently and quickly. This makes it perfect for use in low-voltage applications such as battery-operated devices.
The FQP33N10L has many advantages, making it ideal for numerous applications. It has a very low gate-to-source voltage, allowing it to be used in circuits that require low voltage. It also has an extremely low drain-to-source capacitance which allows it to be used in higher-frequency applications. Finally, the FQP33N10L has a high speed switching capability, making it suitable for use in high frequency applications. All these features make the FQP33N10L a versatile transistor with many uses in various industries.
The FQP33N10L is well suited for a variety of applications where its versatility and power handling capabilities come in handy. It is the perfect choice for low-voltage applications such as power management circuits, boost and buck converters, motor drivers, switching and power management, and low-voltage LED drivers. In addition, the FQP33N10L has wide-ranging applications in the industrial, automotive and consumer electronics industries. With its small size and low power consumption, it is especially popular in battery-operated applications.
In conclusion, the FQP33N10L is a powerful, versatile transistor with a wide range of applications. It is ideal for high-current and low-voltage applications such as power management, motor control, and LED drivers. With its low input capacitance, low spread of threshold voltage, and low on-resistance, it is the ideal choice for many applications. Furthermore, its high speed switching capability, low gate-to-source voltage, and low drain-to-source capacitance make it perfect for high-frequency applications making it a great choice in various industries.
The specific data is subject to PDF, and the above content is for reference
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