FQP30N06L

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQP30N06L is a Field-Effect Transistor (FET) designed to minimize the on-state resistance of power switching circuits. FETs are an important type of transistor that is used in a wide range of applications, such as amplifiers and audio circuits, as well as other applications that require high-current switching operations. This particular FET is a double-sided metal oxide semiconductor Field-Effect Transistor (MOSFET), it is a low-voltage device with a low drain-to-source voltage (VDS) of 30V and a maximum drain current (ID) of 60A.

The FQP30N06L, which is a n-channel MOSFET, is unique in its application due to its insulated gate technology which is self-protected from short-circuits, overvoltages and thermal runaway. This is particularly beneficial as it allows the device to be used in a wider range of applications with increased safety and security measures.

The FQP30N06L is designed with a fully-isolated, low-resistance package which helps to minimize the switch’s on-state resistance and maintains the desired amount of heat dissipation. This is particularly important since it helps to ensure that the system is properly cooled and avoids possible damage due to overheating.

The device also works with a number of different operating conditions and temperatures, making it suitable for a variety of applications. This is an important feature for applications where it may be necessary to operate the device in a wide range of conditions, such as in low- and high-temperature and humidity applications. In addition, the device’s low substrate definition and low leakage current also reduces power consumption.

The main working principle behind the FQP30N06L is the application of a negative voltage to the gate, which allows current to flow through the device. This particular FET is able to handle high voltage and current operations, allowing it to be suitable for applications that have power supplies with a high voltage rating. This also makes the device particularly suitable for applications that require high-frequency operations. When it comes to switching operations, the FQP30N06L is also able to deliver low switching times, which helps to reduce overall power consumption and improve efficiency.

The FQP30N06L is a versatile device with numerous applications. Due to its insulated gate technology and isolated package, it is suitable for a variety of industrial and consumer applications. Additionally, the low on-state resistance and fast switching times make the device well-suited for power-supply and RF applications. Additionally, the device also works with a range of operating conditions and temperatures, making it ideal for applications in which the device may be exposed to wide-ranging environmental conditions.

Overall, the FQP30N06L is a powerful and reliable FET that is suitable for a wide range of applications. Its low on-state resistance, high voltage and current operations, and fast switching times make it suitable for both power-supply and RF applications that are exposed to a range of operating conditions and temperatures. Its self-protecting insulated gate technology also ensures that the device is safe to use in various applications with increased safety and security measures.

The specific data is subject to PDF, and the above content is for reference