FQP3N30 Allicdata Electronics
Allicdata Part #:

FQP3N30-ND

Manufacturer Part#:

FQP3N30

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 300V 3.2A TO-220
More Detail: N-Channel 300V 3.2A (Tc) 55W (Tc) Through Hole TO-...
DataSheet: FQP3N30 datasheetFQP3N30 Datasheet/PDF
Quantity: 1940
Stock 1940Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 55W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The FQP3N30 is an N-channel enhancement mode silicon gate Field Effect Transistor (FET) manufactured by Fujitsu. The FQP3N30 has a maximum drain to source voltage of 30V, a drain current of 8A, a maximum power dissipation of 92 Watts, and a drain to source on resistance of approximately 32 mOhm.

The FQP3N30 is perfect for applications that require high current and/or voltage switching and low on resistance. Some examples applications can range from computer RAM modules, to switching supplies and DC-DC converters.

The FQP3N30 can be operated in the enhancement mode (normally-off) while a gate voltage of 0V or greater is applied to the device. If a voltage less than 0V is applied, the transistor will be off, or switched off. This is the same as a common source configuration with the gate voltage as the control mechanism.

The FQP3N30 has a very low gate-source threshold voltage, i.e. the gate voltage at which the device is turned on (Vgsth). The Vgsth is typically 2V, hence the device can be easily operated from the typical logic families available in the market.

The FQP3N30 has a maximum voltage rating of 30V, and this means it can also be used in high-voltage switching applications. Due to its low on resistance and high current rating, the FQP3N30 has wide applications in power MOSFET driver circuits. For example, it can be used as a switch in buck converter circuits to switch the MOSFETs on and off.

The FQP3N30 also has a very low input capacitance, i.e. the capacitance between the gate and source terminals. This low input capacitance allows the FQP3N30 to be used in high-frequency applications as it does not require a high current to charge and discharge the capacitance. This means the response time is much faster.

In conclusion, the FQP3N30 is an N-channel enhanced mode MOSFET with a wide range of applications from computer RAM modules to buck converters and switching supplies. The device can be easily operated from any logic family available in the market, and due its low on resistance, high current rating, and low input capacitance, the FQP3N30 is an ideal choice for a variety of power applications.

The specific data is subject to PDF, and the above content is for reference

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