FQP3N50C-F080

Gate Charge (Qg) (Max) @ Vgs:	13nC @ 10V
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	62W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	365pF @ 25V
Vgs (Max):	±30V
Series:	--
Vgs(th) (Max) @ Id:	4V @ 250µA
Rds On (Max) @ Id, Vgs:	2.5 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	1.8A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active

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The FQP3N50C-F080 MOSFET has been designed to fulfill a variety of applications, thanks to its versatile functionality and reliable performance. The device belongs to the category of single field-effect transistors (FETs), which use an electric field to control the flow of current between source and drain, making them ideal for a range of applications. This article will focus on the application field and working principle of the FQP3N50C-F080 MOSFET. The FQP3N50C-F080 MOSFET is characterized by an excellent combination of features, such as low gate charge and low gate-source capacitance, making it suitable for a broad range of applications. It can be used as a power switch in switching applications, such as DC/DC converter, Uninterruptible Power Supplies (UPS), motor drives, and solar inverters. The device can also be used in lighting and appliance control circuits, as well as in a variety of analog and digital circuits. The FQP3N50C-F080 is a N-channel enhancement mode MOSFET, meaning that it has one p-type semi-conductor layer, between two n-type layers, with one of the n-type layers acting as the gate. The device has a rated drain-source voltage (VDS) of 500V with a continous drain current (ID) of 8A, and a gate-source voltage (VGS) of 30V. When the device is not turned on, no current flows through the device, as the gate is isolated from the source. However, when a positive voltage is applied to the gate, the electric field between the gate and the source will be strong enough to push the electrons from the source to the drain. This charging of the drain creates a low impedance path for the current to flow from source to drain and the device is now turned ON. When the gate voltage is removed, the electrons are pulled back to the source, and the device is OFF. This cycle of turning the device ON and OFF can be repeated as many times as needed, making it very useful for power switching applications. The FGS3N50C-F080 also offers excellent switching speed and thermal performance, thanks to its low gate-source capacitance and low gate charge. The device features a high Frequency-dependent drain current (IDFR), which allows it to switch faster and with greater accuracy even under very high switching speeds. High switching speeds are vital for the correct operation of devices such as the UPS and motor drives, which can require very large currents to be switched on and off very quickly. The device also exhibits superior thermal characteristics, which allows it to operate efficiently even at high temperatures. In summary, the FQP3N50C-F080 MOSFET is an excellent power switch, often used to provide reliable power switching capabilities in a wide range of applications. The device is characterized by low gate charge and gate-source capacitance, allowing it to switch faster and operate in high temperatures. Additionally, its high frequency-dependent drain current makes it ideal for applications requiring large current switching at high speeds. This makes it an attractive option for a variety of applications, including DC/DC converter, Uninterruptible Power Supplies (UPS), motor drives, solar inverters, lighting and appliance control circuits, and a range of analog and digital circuits.

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