
Allicdata Part #: | FQP34N20-ND |
Manufacturer Part#: |
FQP34N20 |
Price: | $ 1.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 31A TO-220 |
More Detail: | N-Channel 200V 31A (Tc) 180W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 904 |
1 +: | $ 1.67000 |
10 +: | $ 1.61990 |
100 +: | $ 1.58650 |
1000 +: | $ 1.55310 |
10000 +: | $ 1.50300 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 180W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 78nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 75 mOhm @ 15.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FQP34N20 is a N-Channel MOSFET constructed in a TO-220 package. This device is ideal for such applications such as low voltage switching, load switching and level shifting. In this article, details about the application field and working principle of the FQP34N20 shall be discussed.
The FQP34N20 is an N-Channel Enhancement-Mode Field Effect Transistor (MOSFET). It is designed to operate as an electronic switch, capable of handling a maximum voltage of 200V and a continuous drain current up to 34A. By controlling the gate of the FQP34N20, a precise switching operation can be achieved with minimal on-resistance of 0.0047 ohm. The FQP34N20 features fast switching speeds (turn-on delay < 12ns, turn-off delay < 18ns) and low gate charge (7.5nC @ 10V). All these features make the FQP34N20 an ideal choice for low voltage motor control, load switching and other applications.
The FQP34N20 is similar to other MOSFETs as it utilizes a thin gate oxide as an insulator and metal gate as a control voltage input. The operation of the FQP34N20 is based on the “open + channel” principle. When a positive voltage is applied to the Gate of the FQP34N20, a thin inversion layer is created in the channel region of the device. This layer of electrons acts like a conducting “bridge” between the Source and Drain regions and allow for current passage. As the voltage is removed from the Gate terminal, the thin inversion layer disappears and the FQP34N20 switches back to its off-state.
The FQP34N20 is capable of operating in high temperature environments up to 175 °C, making it well suited for a wide range of applications. It can be found in a variety of automotive and communication systems, as well as motor speed control applications such as motor waste pumps, electric car door opening systems, air conditioner blowers, DC-DC converters, etc. In addition, the FQP34N20 can be used as a power switch in various consumer electronic appliances such as kitchen appliances, microwave ovens, and electric irrigation systems.
To sum up, the FQP34N20 N-Channel MOSFET is a very versatile device with a wide range of applications. With its excellent switching speed and low on-resistance, the FQP34N20 is a great choice for motor control and load switching applications. The FQP34N20 is also well suited for high temperature environments and can be found in numerous industries such as automotive, communication and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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