Allicdata Part #: | FQP3P50-ND |
Manufacturer Part#: |
FQP3P50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 500V 2.7A TO-220P-Channel 500V 2.7A (T... |
More Detail: | N/A |
DataSheet: | FQP3P50 Datasheet/PDF |
Quantity: | 7157 |
Series: | QFET® |
Packaging: | Tube |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 2.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4.9 Ohm @ 1.35A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Power - Max: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 85W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Base Part Number: | -- |
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FQP3P50 is a MOSFET (metal-oxide semiconductor field-effect transistor) that comprises of a single-die pseudomorphic high electron mobility transistor (pHEMT). This type of transistor is a form of metal-oxide-semiconductor field-effect transistor (MOSFET) that is designed to offer some of the best gate capacitance and gate resistance of any MOSFET currently manufactured. A MOSFET is a type of transistor that utilizes a voltage application across a gate that controls current through the transistor. This allows it to be used in a variety of applications where current needs to be switched or modulated.
The unique features of the FQP3P50 make this particular MOSFET particularly attractive for high-speed, high-current switching applications. It has an extremely low on-resistance (RDS(on)), meaning it can switch faster and with less energy. Furthermore, its low gate capacitance allows for fast switching speeds, making it suitable for high-frequency applications. Additionally, its higher transconductance and drain-source breakdown voltage (BVDSS) enhance its performance and durability in a variety of applications.
The FQP3P50 works on a principle of controlling current flow by applying a voltage to the gate of the transistor. A voltage is applied to the gate which then creates an electrical field which controls the flow of current from the source to the drain. When the gate voltage is high, current flows; when the gate voltage is low, current does not flow. This makes FQP3P50 a great choice for applications where a switch is required to control current. Its high power capabilities also make it suitable for automotive, industrial and even military applications.
The FQP3P50 can be used in a variety of applications where fast switching times are needed. As an example, it can be used in DC-DC converters as a switching element in order to efficiently control the output voltage. It can also be used as a power switch in battery-powered applications, as it can act as an efficient and reliable control for battery current draw. Furthermore, the FQP3P50 can be used in consumer audio equipment, such as car amplifiers or power supplies, as an efficient switch for controlling audio signal strength and power.
In conclusion, the FQP3P50 is an efficient and reliable MOSFET that is suitable for a variety of high-speed, high-current switching applications. Its low on-resistance, high transconductance and drain-source breakdown voltage make it an excellent choice for a wide variety of applications, including DC-DC converters, battery powered devices, audio equipment and automotive and industrial applications. Its unique features and performance capabilities make it an excellent choice for any application where fast and efficient current control is needed.
The specific data is subject to PDF, and the above content is for reference
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