Allicdata Part #: | FQP3N90-ND |
Manufacturer Part#: |
FQP3N90 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 3.6A TO-220 |
More Detail: | N-Channel 900V 3.6A (Tc) 130W (Tc) Through Hole TO... |
DataSheet: | FQP3N90 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 130W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 910pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 4.25 Ohm @ 1.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQP3N90 application field and working principle
The FQP3N90 N-channel MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) is one of the most versatile power transistors in the world. It is used extensively in power management circuits, as well as to switch loads such as HVAC systems and other equipment.
The FQP3N90 is a high-performance, low-voltage device. It is constructed with a wide range of materials, including an oxide-diffusion layer with a high current carrying capability. The oxide-diffusion layer provides higher current density for the system when compared to other MOSFETS.
The FQP3N90 is designed to operate in a range of 0.1V to 15V and has a maximum breakdown voltage of 20V. It has a maximum on-state resistance of 1.0 ohms and can provide a maximum continuous drain current of 90A. It has a Gate-to-Source input capacitance of 1.2nF and a drain-to-source capacitance of 8.1nF. The FQP3N90 is available in a variety of packages, including a surface mount version.
Working Principle
The FQP3N90 MOSFET works on a voltage-controlled principle where a voltage applied to the Gate terminal of the transistor controls the flow of current through the Drain and Source terminals. When a positive voltage is applied at the Gate, it attracts the mobile carriers from the Drain to Source. This reduces the resistance between the Drain and Source and allows current to flow through the device. Conversely, when the Gate voltage is lowered, this repelling force overpowers the attraction and restricts the flow of current and thus, increasing the resistance between the Drain and Source.
The Gate voltage is typically used to switch the device ON or OFF. When the drain-source voltage is applied, the Gate voltage determines the amount of current that flows through the device and the current will be determined by the Gate voltage. For example, the voltage is equal to one-third of the drain-source voltage, then the current will be one-third of the maximum current.
Applications
The FQP3N90 MOSFET is widely used for its high voltage and current capabilities, making it ideal for power management applications. It is suitable for use in a variety of industries, such as automotive, lighting, industrial, and medical. In the automotive industry, it is used to switch high power components such as fuel pumps, headlights, and starters. In industrial applications, the FQP3N90 is used to control high current motors, pumps, and compressors. In the medical field, it is used to power medical devices such as X-ray machines, scanners, and lasers.
The FQP3N90 MOSFET is also suitable for power supply design, as it allows for precise control of the output current. In addition, it is a good choice for high-frequency switching applications, as it offers fast switching times and low on-resistance. Its safety features make it suitable for applications where safety is critical, such as battery-operated products.
Conclusion
The FQP3N90 MOSFET is one of the most reliable and versatile power transistors available. With its high voltage and current capabilities, it is suitable for a variety of applications in various industries. Its fast switching time and low on-resistance make it ideal for high-frequency switching applications. In addition, its safety features make it suitable for applications where safety is critical.
The specific data is subject to PDF, and the above content is for reference
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