| Allicdata Part #: | FQP3N25-ND |
| Manufacturer Part#: |
FQP3N25 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 250V 2.8A TO-220 |
| More Detail: | N-Channel 250V 2.8A (Tc) 45W (Tc) Through Hole TO-... |
| DataSheet: |  FQP3N25 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 45W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 170pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 5.2nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 2.2 Ohm @ 1.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2.8A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The FQP3N25 is a Power MOSFET designed by Fairchild Semiconductor. This component is a single N-channel enhancement-mode MOSFET and it is commonly used in power supply and power amplifier circuits. The component is also useful for Switching applications, as it has a low on-resistance and a low RDS(on) which results in low power dissipation.
The FQP3N25 is a N-Channel, enhancement-mode MOSFET that is fabricated using high-quality silicon and optimized for improved electrical performance. This component is ideal for use in high-speed switching applications where power dissipation is a concern. It has a low on-resistance of 3.5 ohms, a low RDS(on) of 0.5 ohms, and it has a fast switching time of 5ns.
In addition to its fast switching times, the FQP3N25 offers excellent protection features. It has a reverse-bias Safe Operating Area (SOA) which protects the component from over-voltage conditions. It also has a Gate-to-Source Diode which prevents damage to the component during load transients.
The FQP3N25 is also capable of operating at a wide range of temperatures. It has an operating temperature range from -55°C to 175°C, and it can withstand higher temperature operation for a short period of time. It also has a wide input voltage range of 3.2V to 100V.
The operation of the FQP3N25 is based on the principle of the Metal-Oxide-Field-Effect-Transistor (MOSFET). It consists of two highly doped regions of silicon, gate and source, that are separated by an oxide insulator. An electric field is created when a voltage is applied to the gate, which causes a change in the conductivity of the silicon and allows current to flow between the source and drain.
The FQP3N25 is a widely used component in a variety of power supply and amplifier circuits. It can also be used in switching applications, as its low on-resistance and low RDS(on) make it an ideal choice for these applications. This component has excellent protection features, a wide range of operating temperatures, and a wide input voltage range, making it an ideal choice for most applications.
The specific data is subject to PDF, and the above content is for reference
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