| Allicdata Part #: | FQP3N60CFS-ND |
| Manufacturer Part#: |
FQP3N60C |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 600V 3A TO-220 |
| More Detail: | N-Channel 600V 3A (Tc) 75W (Tc) Through Hole TO-22... |
| DataSheet: |  FQP3N60C Datasheet/PDF |
| Quantity: | 11329 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 75W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 565pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 3.4 Ohm @ 1.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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FQP3N60C is a type of field effect transistor (FET). It is a type of MOSFET (Metal Oxide Semiconductor FET) that is specifically designed for logic-level switching applications. It is a n-channel MOSFET, the gate of which is connected to the source of the device. The main characteristics of the FQP3N60C are its low on-state resistance and its ability to switch efficiently at low voltages.
FQP3N60C is used as a switching device in many electronic circuits, where it can be used for controlling the power supply voltage to the load. It is widely used in power supplies, switching power regulators, H-bridge motor controllers and inverters. It can also be used for applications like DC-DC convertors, relay drivers, using a higher voltage to control the switching of a lower voltage.
The FQP3N60C has an integrated structure in which the oxide layer is thicker than other MOSFETs. This provides a better breakdown voltage and superior performance at higher temperatures. It also has a lower input capacitance, which results in faster switching times and better protection against switching transients.
The working principle of FQP3N60C is based on the same principles used in other MOSFETs. The device consists of a source and a drain connected to the gate of the FET. When a voltage is applied across the gate of the device, a density of electrons or holes is formed on the surface of the oxide layer, resulting in a depletion or inversion layer between the source and the drain. This grants the MOSFET its on or off state.
The FQP3N60C is a popular choice for switching applications due to its excellent performance characteristics under demanding conditions. Its superior performance at high temperatures makes it ideal for applications in hot environments, and its low input capacitance gives it a high switching speed. Its low on-state resistance and ability to switch efficiently at low voltages make it a good choice for logic-level switching applications.
The specific data is subject to PDF, and the above content is for reference
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