Allicdata Part #: | FQP46N15-ND |
Manufacturer Part#: |
FQP46N15 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 45.6A TO-220 |
More Detail: | N-Channel 150V 45.6A (Tc) 210W (Tc) Through Hole T... |
DataSheet: | FQP46N15 Datasheet/PDF |
Quantity: | 509 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 210W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3250pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 22.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 45.6A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FQP46N15 is an N-Channel enhancement mode field-effect power transistor offered by Fairchild Semiconductor. It features an extremely low gate-to-source threshold voltage, along with a very low typical turn-on time and input capacitance that makes it suitable for high-speed switching applications. The FQP46N15 is characterized for real performance in the applicaiton field of low-voltage and high-current automotive, consumer, and industrial applications, such as DC-DC converters, inverters, high-efficiency motor control and switches.
This FET can handle up to 150A (Tc = 25℃), 175A (Tc = 100℃), 200A (Tc = 150℃) pulsed currents, and has a maximum voltage rating of 4V from the drain to the source. It is also capable of withstanding a maximum drain source voltage of 400V. The FQP46N15 is available in through-hole and surface mount packages.
The working principle behind the FQP46N15 FET is very simple, but highly effective in its use. The FET is composed of a number of p-type layers, which must be arranged in a special way to create the desired effect.
These layers are then laid down in a two-dimensional planar structure. When a gate voltage is applied to the FET, the resulting electric field causes an inversion layer that extends across the surface of the device, allowing current to flow between the source and the drain.
The drain current is controlled by the input signal applied to the gate. When a negative voltage is applied to the gate, it causes a depletion region to form around the junction, thus blocking the flow of current. Conversely, when a positive voltage is applied to the gate, it causes an inversion layer to form, allowing current to flow freely.
In addition to controlling the drain current, the gate voltage applied to the FQP46N15 can also be used to control the drain-source voltage, as well as the on-resistance. This makes the FET especially useful in applications such as DC-DC converters, inverters, high-efficiency motor control and switches.
The combination of low gate-to-source threshold voltage, low typical turn-on time and input capacitance make the FQP46N15 a great choice for many applications. It is available in through-hole and surface mount packages, and is ready to be used in the wide range of consumer, industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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