FQP4N90

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A Field-effect transistor (FET) is an electronic device that is commonly used in computer equipment, mobile phones, and other electronic products. The FQP4N90 is a power MOSFET, which is a type of FET that is designed to handle higher voltages and higher power requirements than standard FETs. This article will discuss the field application and working principles of the FQP4N90.

FQP4N90 Application Field

The FQP4N90 is a N-channel power MOSFET that is designed for applications ranging from power switching to low-voltage signal switching. This FET is mainly used in high-accuracy frequency control, high-speed switching of power supplies, high-power switching of solenoids and relays, and other high-power switching applications. This device is suitable for applications that require low on-resistance and high breakdown voltage due to its high on-resistance and low gate capacitance. Additionally, the FQP4N90 can also be used in automotive control circuits due to its low on-resistances and high breakdown voltages.

FQP4N90 Working Principle

The FQP4N90 is a four-terminal, N-channel MOSFET that consists of a source, drain, gate, and body (or bulk) terminal. When a positive voltage is applied to the gate terminal, it forms an electric field between the gate and the body of the FET, which "turns on" the FET. This allow current to flow from the source to the drain, thus allowing the FET to conduct electricity. When the gate voltage is removed, the electric field is removed and the FET "turns off," preventing current from flowing through the FET. This is how the FQP4N90 works and allows it to be used in various high-power applications.

Conclusion

The FQP4N90 is a power MOSFET that is designed for applications ranging from high-accuracy frequency control to high-power switching of relays. It is characterized by its low on-resistance and high breakdown voltage, making it suitable for applications that require precise power switching. Its four-terminal, N-channel structure allows for the FET to be turned on and off by applying a voltage to the gate terminal. This allows the FET to be used in high-power applications that require precise switching.

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