| Allicdata Part #: | FQP4N90C-ND |
| Manufacturer Part#: |
FQP4N90C |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 900V 4A TO-220N-Channel 900V 4A (Tc) 1... |
| More Detail: | N/A |
| DataSheet: |  FQP4N90C Datasheet/PDF |
| Quantity: | 17340 |
| Series: | QFET® |
| Packaging: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 900V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 4.2 Ohm @ 2A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Power - Max: | 140W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 960pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 140W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
| Base Part Number: | FQP4 |
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1. Describe
FQP4N90C / FQPF4N90C — N-Channel QFET ® MOSFET This N-channel enhancement mode power MOSFET is Manufactured using Fairchild's proprietary flat surface Stripes and DMOS technology. This advanced MOSFET Technology designed to reduce on-states resistance and provide excellent switching performance and high avalanche energy intensity. These devices are Suitable for switching power supply, active power supply Factor Correction (PFC) and Electronic Lamp Ballasts
2. Feature
1. 4.0 A, 900 V, RDS(on) = 4.2 Ω (max) @ VGS = 10 V, ID = 2.0 A
2. Low gate charge (17 nC typical)
3. Low Crss (typ. 5.6 pF)
4. 100% Avalanche Tested
3. product description
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