Allicdata Part #: | FQP4P25-ND |
Manufacturer Part#: |
FQP4P25 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 250V 4A TO-220 |
More Detail: | P-Channel 250V 4A (Tc) 75W (Tc) Through Hole TO-22... |
DataSheet: | FQP4P25 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 420pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 2.1 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FQP4P25 transistor is an enhancement mode Field-Effect Transistor (FET) that is part of a family of Field-Effect Transistors (FETs) from Fairchild Semiconductor. Specifically, this is a P-Channel transistor, which operates on a 25V drain-to-source voltage. The FQP4P25 was designed for low power purposes, and it is most commonly used for switching and amplifier applications.
The FQP4P25 is built on a silicon substrate and is manufactured using a combination of diffusion and oxidation processes. The FQP4P25 has three terminals that pass through the substrate, which are then connected to a metal layer. This metal layer functions as an electric shield that helps to separate the FET from the substrate. The source electrode is connected to a contact pad, which is then connected to an external terminal. The drain and gate electrodes are connected to their respective contact pads, which are then connected to the appropriate external terminals.
The working principle of the FQP4P25 is that it has a source region, which is where the current is sourced or drained, the drain region, which is where the current is drained off, and the gate region, which is where the current is controlled by the gate-source voltage. Due to the presence of a depletion region, when the gate-source voltage is applied, it creates an electric field that causes a depletion layer to form beneath the gate. This helps to create a barrier between the source and drain regions, controlling the flow of current as a result. When the device is turned on, the gate-source voltage applied increases the electric field, which causes the depletion layer to further reduce the resistance between the source and drain regions, allowing current to flow.
The FQP4P25 transistor can be used in a variety of different applications, such as switching or amplifying circuits. It is typically found in low power consumer electronics, such as audio amplifiers or digital circuits. The device is also used in high power applications, such as motor drives and power supplies. The FQP4P25 can also be used in power switching circuits, such as those found in motor controllers. Additionally, the FQP4P25 can be used in many automotive systems, such as airbag systems, ABS brakes, and CANbus systems.
The FQP4P25 is an important component in many low voltage applications, offering low on resistance and high switching speeds. The device is also designed to be efficient, with a low power dissipation that helps to reduce energy consumption. Additionally, the FQP4P25 has a low gate input capacitance, which helps to reduce the overall power consumption of the device. The FQP4P25 is a reliable, efficient, and cost effective solution for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FQP44N10F | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 43.5A TO... |
FQP47P06_NW82049 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 60V 47A TO-22... |
FQP47P06_SW82049 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 60V 47A TO-22... |
FQP4P40 | ON Semicondu... | -- | 63 | MOSFET P-CH 400V 3.5A TO-... |
FQP46N15 | ON Semicondu... | -- | 509 | MOSFET N-CH 150V 45.6A TO... |
FQP44N10 | ON Semicondu... | -- | 702 | MOSFET N-CH 100V 43.5A TO... |
FQP4N25 | ON Semicondu... | -- | 1000 | MOSFET N-CH 250V 3.6A TO-... |
FQP4N20 | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 3.6A TO-... |
FQP4P25 | ON Semicondu... | -- | 1000 | MOSFET P-CH 250V 4A TO-22... |
FQP4N50 | ON Semicondu... | -- | 1000 | MOSFET N-CH 500V 3.4A TO-... |
FQP4N60 | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 4.4A TO-... |
FQP44N08 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 80V 44A TO-22... |
FQP4N90 | ON Semicondu... | -- | 1000 | MOSFET N-CH 900V 4.2A TO-... |
FQP4N20L | ON Semicondu... | -- | 595 | MOSFET N-CH 200V 3.8A TO-... |
FQP47P06 | ON Semicondu... | -- | 3656 | MOSFET P-CH 60V 47A TO-22... |
FQP45N15V2 | ON Semicondu... | -- | 1121 | MOSFET N-CH 150V 45A TO-2... |
FQP4N90C | ON Semicondu... | -- | 17340 | MOSFET N-CH 900V 4A TO-22... |
FQP4N80 | ON Semicondu... | -- | 3331 | MOSFET N-CH 800V 3.9A TO-... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...