FQP4N20L Allicdata Electronics
Allicdata Part #:

FQP4N20L-ND

Manufacturer Part#:

FQP4N20L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 200V 3.8A TO-220
More Detail: N-Channel 200V 3.8A (Tc) 45W (Tc) Through Hole TO-...
DataSheet: FQP4N20L datasheetFQP4N20L Datasheet/PDF
Quantity: 595
Stock 595Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Series: QFET®
Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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FQP4N20L Application Field and Working Principle

The FQP4N20L, a powerful 200V N-Channel Enhancement-Mode MOSFET, is widely applicable in fields ranging from automotive and industrial electronics to consumer electronics. This power MOSFET is mainly used in low voltage, power efficient, short circuit protected, motor control, air conditioning, and LED lighting applications. This article aims to provide an overview of the FQP4N20L capabilities, its common application fields, and its working principle.

Capabilities

The FQP4N20L is an N-Channel Enhancement Mode MOSFET that utilizes advanced high-voltage processing and package technology for 100% avalanche operational stress. It offers a superior performance of 200V, 25A, and 20mΩ maximum on-resistance in a PPT-6 package size. Its low gate charge and high current capability make it very versatile and easy to use.

Application Fields

Due to its high efficiency and high-power capability, the FQP4N20L is widely used in various fields. Some of the common application fields include:

  • Automotive electronics, such as electric power steering, cruise control, and engine control
  • Industrial electronics, such as motor control, AC inverters, and power converters
  • Consumer electronics, such as home appliances, TVs and monitors, and USB/battery chargers
  • LED lighting, such as energy efficient lighting, decorative lighting, and automotive lighting

Working Principle

The FQP4N20L is an N-Channel Enhancement Mode MOSFET, which works on the principle of "Source-Drain Charge Control". In this device there is an insulated gate ( Metal-Oxide-Semiconductor) is formed between the source and drain, and when an applied voltage is applied across it, a charge at the gate will control the current flow between the source and drain. The N-Channel MOSFET is composed of two P-type semiconductor devices strapped together. It operates like a small FET switch, where the gate voltage determines the source-drain current. Depending on the type of control applied, different devices can be used as switches, amplifiers, regulators, and more.

Conclusion

The FQP4N20L proves to be an excellent choice for power efficient applications due to its features and performance. This high-performance device offers improved thermal performance, voltage rating, and low gate charge for easy design, which makes it an attractive choice for various application fields ranging from automotive and consumer electronics to LED lighting. Knowing the device’s capabilities and application fields as well as its working principle can help designers make an informed decision when choosing a MOSFET for their applications.

The specific data is subject to PDF, and the above content is for reference

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