Allicdata Part #: | FQP4P40FS-ND |
Manufacturer Part#: |
FQP4P40 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 400V 3.5A TO-220 |
More Detail: | P-Channel 400V 3.5A (Tc) 85W (Tc) Through Hole TO-... |
DataSheet: | FQP4P40 Datasheet/PDF |
Quantity: | 63 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 85W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 3.1 Ohm @ 1.75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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FQP4P40 is an enhancement-mode field effect power MOSFET transistor that is manufactured, packaged, and sold in TO-220 plastic packages. It is a high-powered device that can be used in a wide range of applications and provides significant advantages over traditional bipolar transistors and other types of MOSFETs.
FQP4P40 provides rock-solid reliability and high current density. It has excellent on-resistance characteristics, making it suitable for power supply design applications. It also provides excellent switching behavior and fast turn-on operation at peak power requirements. Additionally, the FQP4P40 features an extremely low power consumption and high-switching speed.
The FQP4P40 is an ideal device for building high-power amplifiers, motor control, high current and light load switching, and power management applications. This device can operate in both high-side and low-side configurations, which makes it suitable for use in isolated power supply systems. It has very few limitations in terms of power handling capabilities and is ideal for applications that require high-current capability, low noise, and high efficiency.
The working principle of the FQP4P40 is relatively simple and straightforward. This device has three terminals, the drain, source, and gate. When voltage is applied to the gate, it controls the flow of electricity through the FET. As the voltage applied to the gate increases, the resistance of the FET decreases, allowing more current to flow through the FET. When the gate voltage is decreased, the resistance increases and the current flowing through the FET is reduced.
The FQP4P40 is a versatile device that can be used in many different types of applications. It is useful in high-power, high-current and light load switching applications, motor control applications, and power management applications. Additionally, the device is suitable for both low-side and high-side configurations. It is also a relatively low power consumption, high-switching speed device.
In summary, the FQP4P40 is a versatile, high-powered field effect transistor that is ideal for building high-power amplifiers, motor control, high current and light load switching, and power management applications. It has a simple working principle and provides excellent on-resistance characteristics. Additionally, the device features an extremely low power consumption and high-switching speed.
The specific data is subject to PDF, and the above content is for reference
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