FQP47P06

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	160W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3600pF @ 25V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	110nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	26 mOhm @ 23.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	47A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tube

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Introduction to FQP47P06 Application Field and Working Principle

The FQP47P06 is a P-channel enhancement mode power MOSFET (metal oxide semiconductor, field effect transistor). It is suitable for use in a wide range of applications, including switching, amplifier and linear applications, involving low power and low voltage.This power MOSFET has excellent weight, size, performance and current-carrying ability, making it one of the most powerful and versatile devices on the market. This article will explain the application field and working principle of the FQP47P06, as well as its benefits and main features.

Application Field

The FQP47P06 is mainly used in low power, low voltage applications. It can be used in switching, amplifier, and linear applications and can be used in both AC and DC circuits.The FQP47P06 is also ideal for applications in DC motor speed control, audio amplifiers, artificial intelligence, and remote sensing applications. It is also used in power supplies and regulators.

Working Principle

The FQP47P06 is a metal oxide semiconductor, field effect transistor. It is an enhancement type transistor, meaning that it requires a positive voltage to the gate to be turned "on". When the gate voltage is high, the source-drain current can flow freely.The FQP47P06 is a P-channel MOSFET, meaning that it uses a p-type channel to connect the source and drain. This type of MOSFET is advantageous because it can handle higher voltages and has better performance than N-channel MOSFETs.

Benefits of the FQP47P06

The FQP47P06 offers a number of benefits, including high switching speed, low on-resistance (RDS(on)), low power loss, and ultra-low gate charge. The device is also designed to minimize the total number of components, resulting in a more efficient system.The FQP47P06 also has an integrated ESD protection and is RoHS compliant, making it a safe and eco-friendly choice for a variety of applications.

Main Features of the FQP47P06

The FQP47P06 is a high power P-channel MOSFET which can be used in a wide range of applications. It has an RDS(on) of 4.5 ohms, a maximum drain-source voltage (VDS) of 40V, a maximum drain current (ID) of 80A, and a maximum power (Pt) of 600W.The device also has an integrated ESD protection and is RoHS compliant. It is available in a TO-220AB package, and is suitable for use in both AC and DC circuits.

Conclusion

The FQP47P06 is a powerful P-channel enhancement mode power MOSFET that can be used in a wide range of applications. It offers a number of benefits, including high switching speed, low on-resistance (RDS(on)), low power loss, and ultra-low gate charge. The device is also designed to minimize the total number of components, resulting in a more efficient system. Additionally, the FQP47P06 has an integrated ESD protection and is RoHS compliant, making it a safe and eco-friendly choice for a variety of applications.

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