Allicdata Part #: | FQP4N50-ND |
Manufacturer Part#: |
FQP4N50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 3.4A TO-220 |
More Detail: | N-Channel 500V 3.4A (Tc) 70W (Tc) Through Hole TO-... |
DataSheet: | FQP4N50 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 460pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 2.7 Ohm @ 1.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQP4N50 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is designed specifically for operation in high-voltage, low-current applications. It is a single device with an integrated gate structure that contains both the source and drain terminals. As a result, it is more efficient and reliable than other types of MOSFETs and is a very useful tool in many electronic and electrical applications. This article will discuss the application field and working principle of the FQP4N50.
The FQP4N50 is an N-channel enhancement-mode logic level power MOSFET. It is designed for applications requiring high-voltage, low-current switching capabilities. This type of MOSFET is typically used in power supplies, motor control systems, and switching power converters. It can also be used in low-noise, high-impedance driver circuits and amplifiers. The FQP4N50 has a low on-state resistance, which means that it allows current to flow with minimal resistance and dissipates less heat.
The FQP4N50\'s operation is based on the principle of a voltage-controlled switch. When a voltage is applied to the Gate terminal of the MOSFET, it acts as an electric field that increases the current flow between the Source and Drain terminals. This increases the drain-source voltage drop and thus increases the voltage across the load. The FQP4N50 has an improved gate voltage threshold, which enables it to be used in high-voltage applications with relatively low gate threshold voltages.
The FQP4N50 has a high input impedance and a low output impedance. This allows it to operate with less power consumption and higher switching speeds. It also has protection against ESD (Electrostatic Discharge) and a wide operating temperature range. As a result, it is highly reliable and is suitable for use in harsh environmental conditions.
The FQP4N50 has a high speed of switching, which allows it to perform faster than other MOSFETs. It has low leakage current, which reduces power consumption. In addition, it can be used in inverters, RF circuits, and voltage regulators. The FQP4N50 is also a good choice for high-power audio applications.
The FQP4N50 is a versatile device that provides a range of features for high-voltage applications. It has a low gate threshold, improved gate voltage threshold, high input impedance, low output impedance, and protection against ESD. It can also operate with high switching speeds and is suitable for use in high-power applications. As a result, the FQP4N50 is an ideal choice for applications that require high-voltage, low-current switching.
The specific data is subject to PDF, and the above content is for reference
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