Allicdata Part #: | FQP47P06_NW82049-ND |
Manufacturer Part#: |
FQP47P06_NW82049 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 47A TO-220 |
More Detail: | P-Channel 60V 47A (Tc) 160W (Tc) Through Hole TO-2... |
DataSheet: | FQP47P06_NW82049 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | QFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 47A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 23.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 160W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
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The FQP47P06_NW82049 is a logic level N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor), a type of Field Effect Transistor (FET) specifically geared towards high power applications. It is constructed with an N-channel MOS structure, which allows for a high degree of flexibility while offering a low on-resistance (RDS(on)) of only 0.47 Ohms. This means that it can handle a high current at low gate voltages, significantly reducing power dissipation.
The FQP47P06_NW82049 is most often used to control the power supply current for user-defined electronics, such as microcontrollers, motor drivers, and various other power-sensitive devices. The device has a low current threshold of 20A, which makes it suitable for applications like motor drives, where high current is required to start the motor but then needs to drop back to a normal level for normal operation.
The key feature of the FQP47P06_NW82049 is its ability to react quickly to a signal from the power control device, allowing for a much more efficient control system. The result of this is a higher reliability and increased safety. The device can also be used in many low voltage applications as it is able to handle up to 60V.
The working principle of the FQP47P06_NW82049 is relatively simple. When a logic-level signal is applied to the gate of the MOSFET, it results in a voltage across the channel, thus allowing current to flow. The current varies depending on the voltage applied, but typically has a linear dependence. The device also features a fast switching speed, allowing for precise control over current flow. The device also offers over rise protection, allowing for faster switching without the risk of damage.
Overall, the FQP47P06_NW82049 is a highly reliable, efficient and low cost device, ideal for power control circuitry in a wide range of applications. Its small size and simplicity make it a great choice for both complex industrial applications and everyday electronics projects. Its low on-resistance allows for it to handle high currents without reducing its efficiency, allowing for great energy savings.
The specific data is subject to PDF, and the above content is for reference
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