HFA3096BZ96 Allicdata Electronics
Allicdata Part #:

HFA3096BZ96-ND

Manufacturer Part#:

HFA3096BZ96

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America Inc.
Short Description: IC TRANS ARRAY NPN/PNP 16-SOIC
More Detail: RF Transistor 3 NPN + 2 PNP 12V, 15V 65mA 8GHz, 5....
DataSheet: HFA3096BZ96 datasheetHFA3096BZ96 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: --
Part Status: Active
Transistor Type: 3 NPN + 2 PNP
Voltage - Collector Emitter Breakdown (Max): 12V, 15V
Frequency - Transition: 8GHz, 5.5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: --
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: HFA3096
Description

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The HFA3096BZ96 is a high-performance PNP silicon bipolar transistor and belongs to the family of RF transistors, specifically the bipolar (BJT) type. It is especially designed to serve as an amplifier in high-frequency applications and is especially useful for radio-frequency applications such as radio amplification, small signal amplification, and preamplifiers. The HFA3096BZ96 has a large PNP h-parameter transistor with an exceptionally large current gain and output power. It is also known for its reliable power handling capability.

Working Principle of HFA3096BZ96

The HFA3096BZ96 works on the principle of electron transfer. In the electron transfer, a large current refills the emitting region with electrons. Due to the presence of the gap between the emitter and the collector, the electrons are transferred to the collector, resulting in a current gain. This current gain is determined by the current that is passed through the base. This current depends on the base voltage and the voltage across the base-emitter junction. It is important to take into consideration that since the transistor is an integral unit, its performance is dependent upon the voltage and current characteristics of the base and the collector.

Application Field of HFA3096BZ96

The HFA3096BZ96 is an ideal choice for use in stereo and CATV operation. It can also be used as a preamplifier in audio and homes electronics. Its high current gain and power handling capabilities make it a suitable choice for use in front-end amplifiers, noise-figure amplification, and gate-bias circuits. It is also suited for high power applications such as RF amplifiers, oscillators, and linear amplifiers.

The HFA3096BZ96 also offers a significant power level for radio operation. Its large current gain and power handling capabilities also make it suitable for use in a wide range of switching applications. It is well-suited for use in cellular radio and digital telecommunication technologies. Moreover, its unique package includes an integrated heat sink that dissipates the heat generated by power dissipation.

The HFA3096BZ96 is a great choice for use in high-frequency applications like radio transmission, antennas, and other amplifiers. With its robust properties and its large PNP transistor, it is able to handle power levels that are higher than normal. It is also great for use in portable instruments, professional audio equipment, and other consumer electronic products. The HFA3096BZ96 also offers a wide range of advantages, including an extended frequency range and low thermal resistance.

The specific data is subject to PDF, and the above content is for reference

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