Allicdata Part #: | HFA3128RZ96-ND |
Manufacturer Part#: |
HFA3128RZ96 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America Inc. |
Short Description: | IC TRANSISTOR ARRAY PNP 16-QFN |
More Detail: | RF Transistor 5 PNP 15V 65mA 5.5GHz 150mW Surface ... |
DataSheet: | HFA3128RZ96 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 5 PNP |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 5.5GHz |
Noise Figure (dB Typ @ f): | 3.5dB @ 1GHz |
Gain: | -- |
Power - Max: | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 10mA, 2V |
Current - Collector (Ic) (Max): | 65mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 16-VFQFN Exposed Pad |
Supplier Device Package: | 16-QFN (3x3) |
Base Part Number: | HFA3128 |
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The HFA3128RZ96 transistor, also known as a Bipolar Junction Transistor (BJT), is a type of transistor used for radio frequency (RF) applications. This particular transistor is produced using high-frequency, high-voltage Silicon manufacturing technologies, allowing it to be highly efficient. This transistor is able to handle large currents and operate within very narrow frequency bands, making it an ideal choice for RF devices.
The working principle of the HFA3128RZ96 transistor is based on the flow of electrons that occur between layers of opposite charges. The device consists of three terminals; the emitter, base, and collector. When a voltage is applied to the emitter and collector of the transistor, a small current starts to flow. This current then creates a gain in the base of the transistor. The larger the current, the larger the gain. As the gain increases, it causes a larger current to flow from the collector to the emitter. This process is used to amplify or switch signals.
This transistor can be used for a variety of applications, ranging from amplifying or switching signals to frequency conversion and pulse modulation. It can be used to build radiofrequency communication systems, wireless data transmission, and cellular telephony networks. It is also used in radar detection and signal modulation.
In terms of its parameters, the HFA3128RZ96 transistor has an operating frequency range of up to 6GHz. It has an input capacitance of 100pF, an output capacitance of 115pF, a power gain of 17 dB, and a collector-speed of 4.0pF. It has a saturation voltage of 7V and a maximum collector current of 75mA. It is also available in through-hole and surface-mount packages, making it easy to mount on PCBs.
Overall, the HFA3128RZ96 transistor is an excellent choice for RF applications. It is highly efficient, can handle large currents, and operates within very narrow frequency bands. It is well-suited for use in a wide range of applications from signal amplification and switching to frequency conversion and pulse modulation. With its wide range of parameters, it is easy to integrate into any system.
The specific data is subject to PDF, and the above content is for reference
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